Carrier mass measurements in degenerate indium nitride

著录项

• 来源
  《Physical review》 |2009年第16期|357-361|共5页
• 作者

  G. Pettinari; A. Polimeni; M. Capizzi; J. H. Blokland; P. C. M. Christianen; J. C. Maan; V. Lebedev; V. Cimalla; O. Ambacher;

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• 作者单位

  Dipartimento di Fisica and CNISM, Sapienza Universita di Roma, P.le A. Mow 2, 00185 Roma, Italy;

  Dipartimento di Fisica and CNISM, Sapienza Universita di Roma, P.le A. Mow 2, 00185 Roma, Italy;

  Dipartimento di Fisica and CNISM, Sapienza Universita di Roma, P.le A. Mow 2, 00185 Roma, Italy;

  High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands;

  High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands;

  High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands;

  Fraunhofer Institute for Applied Solid State Physics, Tullastr, 72, 79108 Freiburg, Germany;

  Fraunhofer Institute for Applied Solid State Physics, Tullastr, 72, 79108 Freiburg, Germany;

  Fraunhofer Institute for Applied Solid State Physics, Tullastr, 72, 79108 Freiburg, Germany;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Ⅲ-Ⅴ semiconductors; landau levels; Ⅲ-Ⅴ semiconductors; semiconductor compounds;

  机译：Ⅲ-Ⅴ族半导体;兰道水平;Ⅲ-Ⅴ族半导体;半导体化合物;