Fluctuation-induced tunneling conduction through nanoconstrictions

Hang Xie; Ping Sheng

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Fluctuation-induced tunneling conduction through nanoconstrictions

机译：波动通过纳米收缩引起的隧穿传导

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摘要

We propose a generalization of the well-known fluctuation-induced tunneling conduction mechanism based on electron tunneling through finite segment(s) of nanoconstrictions whose transverse dimension is less than half the Fermi wavelength. By considering the effects of thermally induced voltage fluctuations across the nanoconstrictions, a temperature-dependent conductivity behavior is obtained which is in good agreement with the experiments, with reasonable parameter values. In the limit of high applied voltage the present model predicts interesting electronic Fabry-Perot behavior manifesting as peaks in differential conductance with linear variation in their voltage separations.

机译：我们提出了基于电子隧穿通过横向尺寸小于费米波长的一半的纳米收缩的有限段的电子隧穿引起的隧穿传导机制的一般化。通过考虑跨纳米颈缩的热感应电压波动的影响，可以获得温度相关的电导率行为，该行为与实验非常吻合，并具有合理的参数值。在高施加电压的限制下，本模型预测了有趣的电子Fabry-Perot行为，表现为差分电导的峰值，其电压间隔呈线性变化。

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来源
《Physical review》 |2009年第16期|748-757|共10页
作者
Hang Xie; Ping Sheng;
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作者单位

Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;

Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;

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正文语种 eng
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electronic transport in mesoscopic systems;

机译：介观系统中的电子传输;

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Fluctuation-induced tunneling conduction through nanoconstrictions

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