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首页> 外文期刊>Physical review >Positron trapping model for point defects and grain boundaries in polycrystalline materials
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Positron trapping model for point defects and grain boundaries in polycrystalline materials

机译：多晶材料中点缺陷和晶界的正电子俘获模型

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摘要

The exact solution of a diffusion-ieaction model for the trapping and annihilation of positrons in grain boundaries of polycrystalline materials with competitive trapping at intragranular point defects is presented. Closed-form expressions are obtained for the mean positron lifetime and for the intensities of the positron lifetime components associated with trapping at grain boundaries and at intragranular point defects. The closed-form solutions allow direct insight in the physical details of the positron annihilation characterislics and can be conveniently applied for the analysis of experimental data. It turns out that the model is not only essential for positron annihilation studies which aim at issues of grain-boundary physics or nanoscaled material but is also of relevance for studies of point defects in polycrystalline materials when grain sizes are in the micrometer range.
机译：提出了一种弥散-反应模型，用于在晶内点缺陷处具有竞争性俘获的多晶材料晶界中正电子的俘获和an灭。对于平均正电子寿命和与在晶界和晶内点缺陷处俘获有关的正电子寿命分量的强度，获得了封闭形式的表达式。封闭形式的解决方案可以直接洞察正电子an灭特性的物理细节，并且可以方便地用于分析实验数据。结果表明，该模型不仅对于针对晶界物理学或纳米级材料问题的正电子an灭研究至关重要，而且对于晶粒尺寸在微米范围内的多晶材料中的点缺陷研究也具有重要意义。

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