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Role of electron-hole pair formation in organic magnetoresistance

机译:电子-空穴对的形成在有机磁阻中的作用

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Magnetoelectrical measurements were performed on diodes and bulk heterojunction solar cell blends (BH-SCs) to clarify the role of formation of Coulombically bound electron-hole (e-h) pairs on the magnetoresistance (MR) response in organic thin-film devices. BHSCs are suitable model systems because they effectively quench excitons but the probability of forming e-h pairs in them can be tuned over orders of magnitude by the choice of material and solvent in the blend. We have systematically varied the e-h recombination coefficients, which are directly proportional to the probability for the charge carriers to meet in space, and found that a reduced probability of electrons and holes meeting in space lead to the disappearance of the MR. Our results clearly show that MR is a direct consequence of the e-h pair formation. We also found that the MR line shape follows a power-law dependence of B~(0.5) at higher fields.
机译:在二极管和体异质结太阳能电池混合物(BH-SC)上进行了磁电测量,以阐明库仑结合的电子-空穴(e-h)对的形成对有机薄膜器件中磁阻(MR)响应的作用。 BHSC是合适的模型系统,因为它们可以有效地淬灭激子,但是通过选择混合物中的材料和溶剂,可以在它们中形成e-h对的概率超过几个数量级。我们系统地改变了e-h重组系数,该系数与电荷载流子在空间中相遇的可能性成正比,并且发现电子和空穴在空间中相遇的可能性降低导致MR消失。我们的结果清楚地表明MR是e-h对形成的直接结果。我们还发现,在更高的磁场下,MR线的形状遵循B〜(0.5)的幂律相关性。

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