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首页> 外文期刊>Physical review >Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation
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Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

机译：使用MBE蒸馏在钇稳定的立方氧化锆（001）上外延和逐层生长EuO薄膜

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摘要

We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of stoichiometry. We have also succeeded in growing the films in a layer-by-layer fashion by fine tuning the Eu vs oxygen deposition rates. The initial stages of growth involve the limited supply of oxygen from the YSZ substrate, but the EuO stoichiometry can still be well maintained. The films grown were sufficiently smooth so that the capping with a thin layer of aluminum was leak tight and enabled ex situ experiments free from trivalent Eu species. The findings were used to obtain recipes for better epitaxial growth of EuO on MgO (001).
机译：我们已经成功地在氧化钇稳定的立方氧化锆（YSZ）（001）上生长了EuO的外延和高化学计量的薄膜。在分子束外延辅助生长过程中使用Eu蒸馏过程能够始终实现化学计量。我们还通过微调Eu与氧气的沉积速率，成功地逐层生长了薄膜。生长的初始阶段涉及到来自YSZ衬底的有限的氧气供应，但是EuO的化学计量仍然可以很好地保持。所生长的膜足够光滑，以致用铝薄层封盖是不漏气的，并且可以进行无三价Eu物种的异位实验。这些发现被用于获得使EuO在MgO（001）上更好地外延生长的配方。

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  • 来源
    《Physical review》 |2009年第20期|205318.1-205318.9|共9页
  • 作者

    R. Sutarto; S. G. Altendorf; B. Coloru; M. Moretti Sala; T. Haupricht; C. F. Chang; Z. Hu; C. Schuessler-Langeheine; N. Hollmann; H. Kierspel; H. H. Hsieh; H.-J. Lin; C. T. Chen; L. H. Tjeng;

  • 作者单位

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

    Chung Cheng Institute of Technology, National Defense University, Taoyuan 335, Taiwan;

    National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu 30077, Taiwan;

    National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu 30077, Taiwan;

    II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Strasse 77, 50937 Koeln, Germany;

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  • 正文语种 eng
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  • 关键词

    thin film structure and morphology; magnetic properties of monolayers and thin films; X-ray absorption spectra; adsorbed layers and thin films;

    机译：薄膜的结构和形态;单层和薄膜的磁性X射线吸收光谱;吸附层和薄膜;

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