Nonmonotonic magnetoresistance of two-dimensional electron systems in the ballistic regime

A. Yu. Kuntsevich; G. M. Minkov; A. A. Sherstobitov; V. M. Pudalov

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Nonmonotonic magnetoresistance of two-dimensional electron systems in the ballistic regime

机译：弹道状态下二维电子系统的非单调磁阻

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We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime for k_BTτ/h > 1. The MR grows with field and exhibits a maximum at fields B > 1 / μ. where μ is the electron mobility. As temperature increases, the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs-based two-dimensional electron systems. We compared our data with recent theory based on the Kohn anomaly modification in magnetic field and found qualitative similarities and discrepancies.

机译：我们报告了在垂直磁场中在k_BTτ/ h> 1的弹道中二维电子系统的新型磁阻（MR）行为的实验观察结果。MR随场增长，并且在场B> 1 /μ处表现出最大值。其中，μ是电子迁移率。随着温度升高，最大值的大小增加，其位置移至更高的场。这种效应是普遍的：在各种基于Si和GaAs的二维电子系统中都可以观察到。我们将我们的数据与基于磁场中Kohn异常修正的最新理论进行了比较，发现了定性的相似性和差异。

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来源
《Physical review》 |2009年第20期|205319.1-205319.4|共4页
作者
A. Yu. Kuntsevich; G. M. Minkov; A. A. Sherstobitov; V. M. Pudalov;
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作者单位

P. N. Lebedev Physics Institute, 119991 Moscow, Russia;

Institute of Metal Physics, Russian Academy of Sciences, 620219 Ekaterinburg, Russia Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russia;

Institute of Metal Physics, Russian Academy of Sciences, 620219 Ekaterinburg, Russia Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russia;

P. N. Lebedev Physics Institute, 119991 Moscow, Russia;

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quantum wells; metal-insulator-semiconductor structures (including semiconductor-to-insulator); Ⅲ-Ⅴ semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; ballistic transport;

机译：量子阱金属-绝缘体-半导体结构（包括半导体到绝缘体）;Ⅲ-Ⅴ半导体与半导体的接触;p-n结和异质结;弹道运输;

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1. Unexpected negative nonmonotonic magnetoresistance of the two-dimensional electrons in Si in a parallel magnetic field [J] . Pudalov VM, Kirichenko AS, Klimov NN, JETP Letters . 2004,第5期

机译：平行磁场中Si中二维电子的非预期负非单调磁阻
2. Local interlayer tunneling between two-dimensional electron systems in the ballistic regime [J] . Katherine Luna, Eun-Ah Kim, Paul Oreto, Physical review . 2010,第23期

机译：弹道状态下二维电子系统之间的局部层间隧穿
3. Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry [J] . P. S. Alekseev, A. P. Dmitriev, I. V. Gornyi, Physical review . 2018,第8期

机译：约束几何中二维粘性电子空穴流体的非单调磁阻
4. Transverse magnetoresistance in GaAs two terminal submicron devices: A characterization of electron transport in the near ballistic regime [C] . Hollis M., Dandekar N., Eastman L.F., Electron Devices Meeting, 1980 International . -1

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5. Electronic transport in two-dimensional systems in the quantum hall regime. [D] . Tarquini, Vinicio. 2016

机译：量子霍尔系统中二维系统中的电子传输。
6. Large positive linear magnetoresistance in the two-dimensional t2g electron gas at the EuO/SrTiO3 interface [O] . Kristy J. Kormondy, Lingyuan Gao, Xiang Li, -1

机译：EuO / SrTiO3界面的二维t2g电子气中的大正线性磁阻
7. Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime [O] . Kuntsevich, A. Yu., Minkov, G. M., Sherstobitov, A. A., 2009

机译：二维电子系统的非单调磁阻弹道政权

Nonmonotonic magnetoresistance of two-dimensional electron systems in the ballistic regime

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