...
首页> 外文期刊>Physical review >Large dielectric response to the paramagnetic-ferromagnetic transition (T_c~100 K) in multiferroic BiMnO_3 epitaxial thin films
【24h】

Large dielectric response to the paramagnetic-ferromagnetic transition (T_c~100 K) in multiferroic BiMnO_3 epitaxial thin films

机译:多铁性BiMnO_3外延薄膜对顺磁-铁磁跃迁(T_c〜100 K)的大介电响应

获取原文
获取原文并翻译 | 示例
           

摘要

The dielectric properties of multiferroic BiMnO_3 50 nm epitaxial thin films grown on Nb-doped SrTiO_3 (001) substrates were analyzed by impedance spectroscopy between 55 and 155 K. One single intrinsic thin film dielectric relaxation process was deconvoluted from an extrinsic electrode interface contribution by the use of an equivalent circuit. The paramagnetic-ferromagnetic transition (T_c~ 100 K) was reflected by a large peak in the thin film relative dielectric permittivity. The weak dielectric response at T_c observed previously in BiMnO_3 polycrystals is largely enhanced in thin films. Intrinsic noninsulating thin film resistivity below T_c was detected.
机译:通过在55和155 K之间的阻抗谱分析了在掺Nb的SrTiO_3(001)衬底上生长的多铁性BiMnO_3 50 nm外延薄膜的介电性能。通过外在电极界面的贡献消除了一个固有的薄膜介电弛豫过程。使用等效电路。顺磁-铁磁跃迁(T_c〜100 K)被薄膜相对介电常数的一个大峰反射。先前在薄膜中大大增强了BiMnO_3多晶体在T_c处的弱介电响应。检测到低于T_c的本征非绝缘薄膜电阻率。

著录项

  • 来源
    《Physical review》 |2009年第21期|214107.1-214107.5|共5页
  • 作者单位

    Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom Engineering Materials, The University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield S1 3JD, United Kingdom;

    Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom ECN Solar Energy, P.O. Box 1, 1755 ZG Petten, The Netherlands;

    Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    transition-metal compounds; manganites; contact resistance; contact potential;

    机译:过渡金属化合物;锰矿;接触电阻接触电位;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号