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首页> 外文期刊>Physical review >Enhanced magnetoresistance due to charging effects in a molecular nanocomposite spin device
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Enhanced magnetoresistance due to charging effects in a molecular nanocomposite spin device

机译：由于分子纳米复合自旋器件中的带电效应，增强了磁阻

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摘要

We have investigated a Coulomb-blockade effect and a higher order cotunneling effect in rubrene-Co nanocomposite spin devices, where the Co nanoparticles were uniformly embedded into the rubrene matrix and a large magnetoresistance (MR) effect appeared. A clear Coulomb gap was observed between ±1.1 V at low temperature. Within the gap, the enhancement of the MR ratio was observed up to ～50%, which has not been explained by previous theoretical studies. The enhancement is induced by higher-order cotunneling. Power-law dependence of an electric current for a bias voltage (I～V~(2N-1); N is an order of cotunneling) was observed in the Coulomb gap, which corroborates that at maximum fifth-order cotunneling is attributed to the enhancement of the MR ratio.
机译：我们研究了在红荧烯-Co纳米复合材料自旋器件中的库仑阻挡效应和更高阶的隧穿效应，其中Co纳米颗粒均匀地嵌入红荧烯基质中，并且出现了大的磁阻（MR）效应。在低温下，在±1.1 V之间观察到清晰的库仑间隙。在该间隙内，观察到MR率提高了约50％，这在以前的理论研究中还没有得到解释。这种增强是由高阶协同隧道引起的。在库仑间隙中观察到电流对偏置电压（I〜V〜（2N-1）； N是协隧道的阶次）的幂律依赖性，这证实了最大程度的五阶协隧道归因于提高MR率。

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  • 来源
    《Physical review》 |2009年第23期|818-822|共5页
  • 作者

    Daiki Hatanaka; Shinichi Tanabe; Haruka Kusai; Ryo Nouchi; Takayuki Nozaki; Teruya Shinjo; Yoshishige Suzuki; Hai Wang; Koki Takanashi; Masashi Shiraishi;

  • 作者单位

    Graduate School of Engineering and Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;

    Graduate School of Engineering and Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;

    Graduate School of Engineering and Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;

    Graduate School of Engineering and Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;

    Graduate School of Engineering and Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;

    Graduate School of Engineering and Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;

    Graduate School of Engineering and Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;

    Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Graduate School of Engineering and Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan JST-PRESTO, 4-1-8 Honcho, Kawaguchi, 332-0012 Saitama, Japan;

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  • 正文语种 eng
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  • 关键词

    magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields; spin transport through interfaces;

    机译：磁电子学自旋电子学：利用自旋极化传输或集成磁场的设备;通过接口旋转传输;

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