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首页> 外文期刊>Physical review >Graphene grown on Co(0001) films and islands: Electronic structure and its precise magnetization dependence
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Graphene grown on Co(0001) films and islands: Electronic structure and its precise magnetization dependence

机译：在Co（0001）薄膜和岛上生长的石墨烯：电子结构及其精确的磁化依赖性

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摘要

We achieve epitaxial growth of graphene on the ferromagnetic substrate Co(0001) by chemical vapor deposition using propylene. Structural and electronic properties are revealed by means of low-energy electron diffraction, scanning tunneling microscopy, and spin- and angle-resolved photoelectron spectroscopy. The results are compared to those of graphene/Ni(111) for which a magnetization-dependent Rashba effect has recently been reported. Bulklike Co(0001) films on W(110) can be separated into islands by heating, and subsequently they can be covered by graphene. Such system is used to present unambiguous proof that in graphene/Co(0001) there is no Rashba effect and no intrinsic dependence of the band dispersion on the magnetization occurs. The high spin polarization of secondary electrons reported for graphene/Ni(111) is confirmed for graphene/Co(0001) with higher values (～25%) due to the larger magnetic moment of Co.
机译：通过使用丙烯进行化学气相沉积，我们在铁磁衬底Co（0001）上实现了石墨烯的外延生长。结构和电子性质通过低能电子衍射，扫描隧道显微镜以及自旋和角度分辨光电子能谱揭示。将结果与最近报道了依赖磁化的拉什巴效应的石墨烯/ Ni（111）进行了比较。可以通过加热将W（110）上的块状Co（0001）薄膜分离为岛状，然后用石墨烯覆盖。该系统用于提供明确的证明，即在石墨烯/ Co（0001）中不存在拉什巴效应，并且不发生带色散对磁化强度的内在依赖性。对于石墨烯/ Ni（111）报道的二次电子具有很高的自旋极化，这是由于Co的磁矩较大而对石墨烯/ Co（0001）具有较高的值（〜25％）。

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