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首页> 外文期刊>Physical review >Absence of self-heated bistable resistivity in La_(0.7)Sr_(0.3)MnO_3 films up to high current densities
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Absence of self-heated bistable resistivity in La_(0.7)Sr_(0.3)MnO_3 films up to high current densities

机译：高达高电流密度的La_（0.7）Sr_（0.3）MnO_3薄膜中不存在自热双稳态电阻率

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摘要

The E(J) characteristics of well-characterized fully strained epitaxial La_(0.7)Sr_(0.3)MnO_3 films have been investigated up to high current densities (J～10~4-10~5 A/cm~2). Different electric contact resistances and different current path configurations have been used to sort out the role of Joule self-heating from contact heating in the transport properties. It is demonstrated through macroscopic transport and conductive scanning force microscopy measurements that contact heating may lead to nonlinear and irreversible E(J) characteristics when high contact resistances are used. Low dissipative contact power measurements are crucial to define the upper J limits to keep linear and reversible E(J) characteristics. We demonstrate that Joule self-heating in La_(0.7)Sr_(0.3)MnO_3 thin films only induces moderate warming at high temperatures while achieving bistable resistivity at low temperatures would require the use of very high current densities (J～5×10~5 A/cm~2).
机译：研究了表征良好的全应变外延La_（0.7）Sr_（0.3）MnO_3薄膜的E（J）特性，直至高电流密度（J〜10〜4-10〜5 A / cm〜2）。已经使用了不同的电接触电阻和不同的电流路径配置，以理清焦耳自热在传输特性中由接触加热引起的作用。通过宏观传输和导电扫描力显微镜测量表明，当使用高接触电阻时，接触加热可能会导致非线性和不可逆的E（J）特性。低耗散接触功率测量对于定义J上限以保持线性和可逆E（J）特性至关重要。我们证明了La_（0.7）Sr_（0.3）MnO_3薄膜中的焦耳自热仅在高温下会引起适度的升温，而在低温下实现双稳态电阻率则需要使用非常高的电流密度（J〜5×10〜5 A / cm〜2）。

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  • 来源
    《Physical review》 |2009年第9期|094412.1-094412.6|共6页
  • 作者

    C. Moreno; C. Munuera; A. Perez del Pino; J. Gutierrez; T. Puig; C. Ocal; X. Obradors; A. Ruyter;

  • 作者单位

    Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Catalonia, Spain;

    Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Catalonia, Spain;

    Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Catalonia, Spain;

    Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Catalonia, Spain;

    Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Catalonia, Spain;

    Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Catalonia, Spain;

    Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Catalonia, Spain;

    CNRS-CEA UMR 6157, LEMA-Universite de Tours, Pare de Crandmont, 37000 Tours, France;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    contact resistance, contact potential; tunneling; nanoscale contacts; switching phenomena;

    机译：接触电阻;接触电位;隧道纳米级触点;切换现象;

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