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Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer

机译:集体模式对电子-空穴双层中零磁场传输的可能影响

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摘要

We report single layer resistivities of two-dimensional electron and hole gases in an electron-hole bilayer with a 10 nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state (dρ/dT<0) emerges at T~1.5 K or lower, when both the layers are simultaneously present. This happens deep in the "metallic" regime, even in layers with k_Fl>500, thus making conventional mechanisms of localization due to disorder improbable. We suggest that this insulating state may be due to a charge-density-wave phase, as has been expected in electron-hole bilayers from the Singwi-Tosi-Land-Sjolander approximation-based calculations of Liu et al. [Phys. Rev. B 53, 7923 (1996)]. Our results are also in qualitative agreement with recent path-integral Monte Carlo simulations of a two component plasma in the low-temperature regime [Ludwig et al., Contrib. Plasma Phys. 47, 335 (2007)].
机译:我们报告了具有10 nm势垒的电子-空穴双层中二维电子和空穴气体的单层电阻率。发现在层间相互作用强于层内相互作用的状态下,当两层同时存在时,绝缘状态(dρ/ dT <0)出现在T〜1.5 K或更低。即使在k_F1> 500的层中,这种情况也深深地在“金属”状态下发生,因此使得由于混乱而导致的常规定位机制变得不可能。我们建议这种绝缘状态可能是由于电荷密度波相位引起的,正如Liu等人基于Singwi-Tosi-Land-Sjolander近似计算得出的电子-空穴双层中所预期的那样。 [物理B 53,7923(1996)]。我们的结果与低温条件下两组分等离子体的最新路径积分蒙特卡罗模拟在质量上也吻合[Ludwig等,Contrib。等离子物理47,335(2007)]。

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  • 来源
    《Physical review》 |2009年第12期|125323.1-125323.6|共6页
  • 作者单位

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom Department of Electronic and Electrical Engineering, University College, London, WC1E7JE;

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  • 正文语种 eng
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  • 关键词

    Ⅲ-Ⅴ semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; collective excitations;

    机译:Ⅲ-Ⅴ半导体与半导体的接触;p-n结和异质结;集体激励;

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