Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation

著录项

• 来源
  《Physical review》 |2009年第15期|153201.1-153201.4|共4页
• 作者

  Yanqin Gai; Jingbo Li; Shu-Shen Li; Jian-Bai Xia; Yanfa Yan; Su-Huai Wei;

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• 作者单位

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

  National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

  National Renewable Energy Laboratory, Golden, Colorado 80401, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  theories and models of crystal defects; Ⅱ-Ⅵ semiconductors; elemental semiconductors;

  机译：晶体缺陷的理论和模型;Ⅱ-Ⅵ半导体;元素半导体;