Interfacial resistive oxide switch induced by reversible modification of defect structures

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• 来源
  《Physical review》 |2009年第16期|992-998|共7页
• 作者

  S. Tsui; Y. Y. Xue; N. Das; Y. Q. Wang; C. W. Chu;

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• 作者单位

  Department of Physics and Texas Center for Superconductivity, University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002, USA Department of Physics, California State University-San Marcos, 333 S. Twin Oaks Valley Road, San Marcos, California 92096, USA;

  Department of Physics and Texas Center for Superconductivity, University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002, USA;

  Department of Physics and Texas Center for Superconductivity, University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002, USA;

  Department of Physics and Texas Center for Superconductivity, University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002, USA;

  Department of Physics and Texas Center for Superconductivity, University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002, USA Hong Kong University of Science and Technology, Hong Kong, China Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  impurity and defect levels; energy states of adsorbed species; defects and impurities: doping, implantation, distribution, concentration, etc.; dielectric loss and relaxation;

  机译：杂质和缺陷水平;吸附物质的能量状态;缺陷和杂质：掺杂;注入;分布;浓度等;介电损耗和弛豫;