...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physical review >Nucleation and first-stage growth processes of extrinsic defects in GaAs triggered by self-interstitials
【24h】

Nucleation and first-stage growth processes of extrinsic defects in GaAs triggered by self-interstitials

机译：自填隙体引发的GaAs外在缺陷的成核和第一阶段生长过程

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The growth process of small self-interstitial clusters I_n (n≤7) in crystalline GaAs has been addressed by semi-empirical tight-binding molecular-dynamics technique. The I_n ground-state structures have been found among many possible choices of topological properties and stoichiometric compositions. The stable structure have been fully characterised concerning the structural, electronic, energetic, and elastic properties; some remarkable findings emerged concerning, among the others, the stability scenario of the ground-state structures, the possible low-energy reaction paths involved in the growth process, the electrostatic and the elastic capture volumes and the Fermi-level pinning. It is demonstrated that compact geometries are no longer energetically favoured for n≥5 and that the I_n growth proceeds via capture processes involving either isolated interstitials or di-interstitials. An extended pentainterstitial (I_5) ground-state structure has been identified as the possible core-basic structure of extrinsic linear defects along the {111} direction of the GaAs lattice.
机译：半经验紧密结合分子动力学技术解决了晶体GaAs中小自填隙簇I_n（n≤7）的生长过程。已经在拓扑性质和化学计量组成的许多可能选择中发现了In基态结构。关于结构，电子，能量和弹性特性，已经对稳定结构进行了充分表征。关于基态结构的稳定性，生长过程中可能涉及的低能反应路径，静电和弹性俘获量以及费米能级钉扎等方面，出现了一些非凡的发现。已经证明，n≥5不再在能量上有利于紧凑的几何形状，并且I_n增长是通过涉及孤立间隙或双间隙的捕获过程进行的。扩展的Penstisterstitial（I_5）基态结构已被确定为沿着GaAs晶格的{111}方向的非本征线性缺陷的可能的核心基础结构。

著录项

  • 来源
    《Physical review》 |2009年第17期|174113.1-174113.13|共13页
  • 作者

    F. Gala; G. Zollo;

  • 作者单位

    Dipartimento di Energetica, Universitd di Roma 'La Sapienza' and Consorzio Nazionale Interuniversitario per le Scienze Fisiche delta Materia (CNISM), Via A. Scarpa 14-16, 00161 Rome, Italy;

    Dipartimento di Energetica, Universitd di Roma 'La Sapienza' and Consorzio Nazionale Interuniversitario per le Scienze Fisiche delta Materia (CNISM), Via A. Scarpa 14-16, 00161 Rome, Italy;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ⅲ-Ⅴ semiconductors;

    机译：Ⅲ-Ⅴ族半导体;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号