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Resonant level formed by tin in Bi_2Te_3 and the enhancement of room-temperature thermoelectric power

机译:锡在Bi_2Te_3中形成的共振能级和室温热电功率的提高

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摘要

Tin is a known resonant impurity in the valence band of Bi_2Te_3 that was previously reported to enhance the thermoelectric power S of the host material at cryogenic temperatures through resonant scattering. We show here that Sn provides an excess density of states (DOS) about 15 meV below the valence band edge and that it is the increases in DOS itself that enhances S of this technologically important semiconductor even at room temperature. The experimental proof for the existence of this resonant level comes from Shubnikov-de Haas measurements combined with galvanomagnetic and thermomagnetic properties measurements.
机译:锡是Bi_2Te_3价带中已知的共振杂质,先前已报道锡可通过共振散射提高低温下主体材料的热电功率S。我们在这里表明,Sn在价带边缘以下提供了约15 meV的过量态密度(DOS),并且DOS本身的增加甚至在室温下也增强了这种技术上重要的半导体的S。该共振能级存在的实验证据来自Shubnikov-de Haas测量以及电磁和热磁特性测量。

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