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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals in SiO_2 films
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Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals in SiO_2 films

机译：离子束合成SiO_2薄膜中Ge纳米晶体的元素重分布和Ge损失

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The elemental redistribution and Ge loss in low-energy Ge~+ implanted SiO_2 films during wet-chemical cleaning and annealing procedures are investigated. Two effects of major importance for Ge nanocrystal formation have been found. Moisture components (H_2O vapor, H~+, OH~-) penetrate into the damaged oxide during storage, wet chemical cleaning, or annealing procedures and lead to a hydrogen and oxygen enrichment in the near-surface oxide. Furthermore, atomic collisions during Ge implantation result in an oxygen excess (with respect to SiO_2 stoichiometry) underneath the Ge profile. The local net ratio of Ge and excess oxygen determines, whether the implanted Ge is incorporated into the SiO_2 network as spatially fixed GeO_2, oxidizes to mobile GeO, or remains as elemental Ge forming nanocrystals. Apart from very shallow profiles, where a drastic Ge loss is observed simply by cleaning in chemical solutions containing H_2O_2, the main Ge loss occurs during annealing. The highly mobile GeO is identified to be responsible for both, Ge redistribution or even loss, if diffusing GeO meets the SiO_2 surface and emanates into the annealing ambient. Annealing in Ar/H_2 mixtures at ≤ 900 ℃ reduces the Ge loss due to the reduction of Ge oxides. The enhanced Ge mobility (as GeO) is described as an oxygen vacancy assisted mechanism which also explains the influence of the Si/SiO_2 interface on the Ge diffusivity. Finally, the consequences of Ge redistribution and loss for Ge nanocrystal memory device fabrication are discussed.
机译：研究了低能Ge〜+注入的SiO_2薄膜在湿法化学清洗和退火过程中的元素再分布和Ge损失。已经发现对于Ge纳米晶体形成最重要的两个效应。在存储，湿化学清洁或退火过程中，水分成分（H_2O蒸气，H〜+，OH〜-）渗透到受损的氧化物中，并导致近表面氧化物中的氢和氧富集。此外，Ge注入期间的原子碰撞导致Ge轮廓下方的氧过量（相对于SiO 2化学计量而言）。 Ge和过量氧的局部净比率决定了注入的Ge是否作为空间固定的GeO_2掺入SiO_2网络，是否氧化成可移动的GeO或保留为元素Ge形成的纳米晶体。除了非常浅的轮廓外，仅通过在含有H_2O_2的化学溶液中清洗即可观察到剧烈的Ge损耗，主要的Ge损耗发生在退火期间。如果扩散的GeO遇到SiO_2表面并散发到退火环境中，那么高迁移率的GeO被认为是造成Ge重新分布甚至损耗的原因。在≤900℃的Ar / H_2混合物中进行退火可减少由于Ge氧化物的还原而造成的Ge损失。增强的Ge迁移率（如GeO）被描述为氧空位辅助机制，这也解释了Si / SiO_2界面对Ge扩散率的影响。最后，讨论了Ge重新分布和损耗对Ge纳米晶体存储器件制造的影响。

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