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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Tunneling study of the charge-ordering gap on the surface of La_(0.350)Pr_(0.275)Ca_(0.375)MnO_3 thin films
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Tunneling study of the charge-ordering gap on the surface of La_(0.350)Pr_(0.275)Ca_(0.375)MnO_3 thin films

机译：La_（0.350）Pr_（0.275）Ca_（0.375）MnO_3薄膜表面电荷有序隙的隧穿研究

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摘要

Variable temperature scanning tunneling microscopy and spectroscopy studies on (110) oriented epitaxial thin films of La_(0.350)Pr_(0.275)Ca_(0.375)MnO_3 are reported in the temperature range of 77-340 K. The films, grown on lattice matched NdGaO_3 substrates, show a hysteretic metal-insulator transition in resistivity at 170 K. The topographic scanning tunneling microscopy images show step-terrace morphology, while the conductance images display a nearly homogeneous surface. The normalized conductance spectra at low temperatures (T < 150 K) show an energy gap of 0.5 eV, while for T≥ 180 K, a gap of 0.16 eV is found from the activated behavior of the zero bias conductance. The presence of energy gap and the absence of phase separation on the surface over more than 2×2 μm~2 area contradict the metallic behavior seen in resistivity measurements at low temperatures. We discuss the measured energy gap in terms of the stabilization of the insulating CO phase at the film surface.
机译：报道了在77-340 K的温度范围内对La_（0.350）Pr_（0.275）Ca_（0.375）MnO_3的（110）取向外延薄膜进行了可变温度扫描隧道显微镜和光谱研究。在晶格匹配NdGaO_3上生长的薄膜基板在170 K时显示出电阻率的滞后金属-绝缘体跃迁。形貌扫描隧道显微镜图像显示阶跃形貌，而电导图像显示几乎均匀的表面。低温（T <150 K）下的归一化电导谱显示出0.5 eV的能隙，而对于T≥180 K，从零偏压电导的激活行为中发现有0.16 eV的能隙。在超过2×2μm〜2的面积上，表面上存在能隙并且没有相分离，这与低温下电阻率测量中观察到的金属行为相矛盾。我们根据薄膜表面绝缘CO相的稳定性讨论了测得的能隙。

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