High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As

D. Wu; Peng Wei; E. Johnston-Halperin; D. D. Awschalom; Jing Shi

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High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As

机译：（Ga，Mn）As中的高场磁晶各向异性电阻效应

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As the magnetization rotates in the (001) plane of epitaxial (Ga,Mn)As films, we observe both two- and fourfold oscillations of comparable magnitude in the longitudinal resistivity. This behavior is different from the usual anisotropic magnetoresistance e

机译：当磁化强度在外延（Ga，Mn）As薄膜的（001）平面中旋转时，我们观察到纵向电阻率中幅度相当的2倍和4倍振荡。这种行为不同于通常的各向异性磁阻e

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来源
《Physical review》 |2008年第12期|653-657|共5页
作者
D. Wu; Peng Wei; E. Johnston-Halperin; D. D. Awschalom; Jing Shi;
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正文语种 eng
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electronic transport phenomena in thin films; magnetotransport phenomena; materials for magnetotransport; magnetic semiconductors;

机译：薄膜中的电子传输现象;磁传输现象;磁运输材料;磁性半导体;

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3. Spin-orbit coupling effect in (Ga,Mn)As films: Anisotropic exchange interactions and magnetocrystalline anisotropy [J] . S. Mankovsky, S. Polesya, S. Bornemann, Physical review . 2011,第20期

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4. Investigation of magnetocrystalline anisotropy by planar Hall effect in GaMnAs epilayers grown on vicinal GaAs substrates [C] . W. L. Lim, X. Liu, K. Dziatkowski Annual Conference on Magnetism and Magnetic Materials . 2005

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High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As

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