Competition between confinement potential fluctuations and band-gap renormalization effects in In_(0.53)Ga_(0.47)As/In_(0.525)Ga_(0.235)Al_(0.25) As single and double quantum wells

Jose Leonil Duarte; Luiz Carlos Pocas; Edson Laureto; Ivan Frederico Lupiano Dias; Elder Mantovani Lopes; Sidney Alves Lourenco; J. C. Harmand

首页> 外文期刊>Physical review >Competition between confinement potential fluctuations and band-gap renormalization effects in In_(0.53)Ga_(0.47)As/In_(0.525)Ga_(0.235)Al_(0.25) As single and double quantum wells

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Competition between confinement potential fluctuations and band-gap renormalization effects in In_(0.53)Ga_(0.47)As/In_(0.525)Ga_(0.235)Al_(0.25) As single and double quantum wells

机译：作为单量子阱和双量子阱的In_（0.53）Ga_（0.47）As / In_（0.525）Ga_（0.235）Al_（0.25）中的限制势能波动与带隙重整化效应之间的竞争

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We present the results of our studies on the emission properties of In_(0.53)Ga_(0.47)As/In_(0.525)Ga_(0.235)Al_(0.25)As single and coupled double quantum wells (CDQWs) with different degrees of potential fluctuation. We have verified that the curve of th

机译：我们提出了关于In_（0.53）Ga_（0.47）As / In_（0.525）Ga_（0.235）Al_（0.25）作为具有不同电位波动程度的单量子双耦合阱（CDQW）的发射特性的研究结果。我们已经验证了

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《Physical review》 |2008年第16期|645-652|共8页
作者
Jose Leonil Duarte; Luiz Carlos Pocas; Edson Laureto; Ivan Frederico Lupiano Dias; Elder Mantovani Lopes; Sidney Alves Lourenco; J. C. Harmand;
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Ⅲ-Ⅴ semiconductors; quantum wells;

机译：Ⅲ-Ⅴ族半导体;量子阱;

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1. On the tunnel injection of excitons and free carriers from In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well to InAs/In_(0.53)Ga_(0.23)Al_(0.24)As quantum dashes [J] . P. Podemski, R. Kudrawiec, J. Misiewicz, Applied Physics Letters . 2006,第6期

机译：从In_（0.53）Ga_（0.47）As / In_（0.53）Ga_（0.23）Al_（0.24）As量子阱到InAs / In_（0.53）Ga_（0.23）Al_（0.24）的激子和自由载流子的隧道注入量子破折号
2. An In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As double hetero-junction junctionless TFET [J] . Liu Hu, Yang Lin-An, Zhang Huawei, Japanese journal of applied physics . 2021,第7期

机译：IN_（0.53）GA_（0.47）AS / IN_（0.52）AL_（0.48）AS / IN_（0.53）GA_（0.47），为双异结合连接无效TFET
3. Effect of an InP/In_(0.53)Ga_(0.47)As interface on spin-orbit interaction in In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As heterostructures [J] . Yiping Lin, Takaaki Koga, Junsaku Nitta Physical review. B, Condensed Matter And Materals Physics . 2005,第4期

机译：InP / In_（0.53）Ga_（0.47）As界面对In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As异质结构中自旋轨道相互作用的影响
4. Study of P-type carbon doping on In_(0.53)Ga_(0.47)As, In_(0.52)Al_(0.2)Ga_(0.28)As, and In_(0.52)Al_(0.48)As [C] . J. Yan, G. Ru, Y. Gong, International conference on applications of photonic technology . 2003

机译：对in_（0.53）Ga_（0.47）的p型碳掺杂的研究，IN_（0.52）AL_（0.2）GA_（0.28）为，in_（0.52）AL_（0.48）为
5. Effect of an InP/In_{0.53}Ga_{0.47}As interface on spin-orbit interaction in In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As heterostructures [O] . Lin, Yiping, Koga, Takaaki, Nitta, Junsaku 2005

机译：InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响

Competition between confinement potential fluctuations and band-gap renormalization effects in In_(0.53)Ga_(0.47)As/In_(0.525)Ga_(0.235)Al_(0.25) As single and double quantum wells

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