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Electronic structure of GaN codoped with Mn and Cr

机译:Mn和Cr共掺杂的GaN的电子结构

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摘要

We have studied the spin-polarized electronic structure of GaN codoped with transition metal (TM) atoms Mn and Cr, with different possible geometrical sites for the dopants, to determine the most favored geometry. The variations in the band structure, density of states, and TM site magnetic moment are analyzed for these geometries. Parallel and antiparallel spin configurations are energetically compared for all the geometries and it is observed that the parallel spin configuration with near neighbor substitution of TM atoms is the most favorable. Our results indicate that Ga(MnCr)N is a prospective candidate as a spintronics material to work at room temperature.
机译:我们研究了掺有过渡金属(TM)原子Mn和Cr的GaN的自旋极化电子结构,其中掺杂剂的几何位置可能不同,以确定最有利的几何形状。对于这些几何形状,分析了带结构,状态密度和TM站点磁矩的变化。在能量上比较了所有几何结构的平行和反平行自旋构型,并且观察到具有TM原子的近邻取代的平行自旋构型是最有利的。我们的结果表明,Ga(MnCr)N是一种可在室温下工作的自旋电子学材料。

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