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首页> 外文期刊>Physical review >Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(2 3~(1/2) × 2 3~(1/2)) R30° surface
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Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(2 3~(1/2) × 2 3~(1/2)) R30° surface

机译：Sn诱导的Si（111）-（2 3〜（1/2）×2 3〜（1/2））R30°表面上Sn薄膜的外延生长和量子阱态研究

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Surface morphologies and electronic structures of Sn thin films prepared on Si(111)-(2 3~(1/2) × 2 3~(1/2)) R30° substrate are investigated by low temperature scanning tunneling microscopy/scanning tunneling spectroscopy (STS). A typical Stranski-Krastanov growth is observed at various growth temperatures (95-300 K), and the Sn islands above wetting layers exhibit the preferential thicknesses of odd-numbered atomic layers. STS measurement shows the formation of well-defined quantum well states with an oscillation period of 2 ML, which modulates the surface energy and accounts for the observed preferential thicknesses. Due to the interplay between large lattice mismatch and symmetry difference, a transition from α-Sn to β-Sn occurs at 4 ML, which confirms the previous report. From 4 to 11 ML, the mismatch resulted strain manifests the growth via thickness-dependent striplike modulation structures on the surfaces of all Sn islands. Upon room temperature annealing, the as-deposited Sn islands undergo a metal-insulator transition, while the band gaps of wetting layers increase and oppositely shift with respect to the Fermi level for n- and p-type substrates. The change in electronic property is attributed to the electron transfer at the Sn-Si interface, which also affects the growth and morphologies of films.
机译：通过低温扫描隧道显微镜/扫描隧道光谱法研究了在Si（111）-（2 3〜（1/2）×2 3〜（1/2））R30°衬底上制备的Sn薄膜的表面形貌和电子结构。 （STS）。在不同的生长温度（95-300 K）下观察到典型的Stranski-Krastanov生长，并且在润湿层上方的Sn岛表现出奇数原子层的优先厚度。 STS测量显示形成了清晰明确的量子阱态，其振荡周期为2 ML，可调制表面能并解释观察到的优先厚度。由于大的晶格失配和对称性差异之间的相互作用，在4 ML处发生了从α-Sn到β-Sn的转变，这证实了先前的报道。从4到11 ML，失配导致的应变通过在所有Sn岛的表面上依赖于厚度的带状调制结构表现出增长。在室温下退火后，沉积的锡岛经历了金属-绝缘体转变，而润湿层的带隙增加，并且相对于n型和p型衬底的费米能级相反地移动。电子性质的变化归因于在Sn-Si界面处的电子转移，这也影响了薄膜的生长和形态。

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