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首页> 外文期刊>Physical review >Erratum: Dielectric constant reduction in silicon nanostructures [Phys. Rev. B 77, 115355 (2008)]
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Erratum: Dielectric constant reduction in silicon nanostructures [Phys. Rev. B 77, 115355 (2008)]

机译：勘误表：硅纳米结构的介电常数降低[物理化学。 B 77，115355（2008年）]

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摘要

In our original article, we measured the dielectric function of silicon nanoslabs as a function of thickness and compared it with theoretical calculations. Our conclusions were that the measured data were in qualitative but not quantitative agreement with the surface polarization effect theory. We hereby report in this erratum that our measurements do in fact agree quantitatively with the theoretical calculations. First we were not aware of an ab initio density functional calculation. Our measurements are in excellent agreement with this calculation (see Fig. 1). Furthermore, we learned that the tight binding calculation shown in Fig. 3 of Ref. 1 could not be directly compared to our measurements. The effective dielectric constant of a slab should have been obtained by averaging 1 / ∈ (z), where z is monolayer position, rather than ∈ (z). The revised theoretical values are plotted in Fig. 1 and agree with the measurements both qualitatively and quantitatively.rnThe authors thank F. Trani and D. Ninno at University of Naples Federico II in Italy; F. Giustino and A. Pasquarello at Ecole Polytechnique Federale de Lausanne (EPFL) in Switzerland; and C. Delerue and G. Allan at Institut d'Electronique, de Microelectronique et de Nanotechnologie in France for fruitful discussions.
机译：在我们的原始文章中，我们测量了硅纳米片的介电函数与厚度的函数关系，并将其与理论计算进行了比较。我们的结论是，测得的数据与表面极化效应理论是定性的，而不是定量的。我们特此报告此错误，我们的测量结果确实与理论计算在数量上相符。首先，我们不知道从头算密度函数的计算。我们的测量与该计算非常吻合（见图1）。此外，我们了解到参考文献的图3中所示的紧密绑定计算。 1无法直接与我们的测量结果进行比较。平板的有效介电常数应通过对1 /∈（z）取平均值来获得，其中z是单层位置，而不是ε（z）。修正后的理论值绘制在图1中，并在定性和定量上均与测量值相符。作者感谢意大利那不勒斯费德里科II大学的F. Trani和D. Ninno；瑞士洛桑联邦理工学院（EPFL）的F. Giustino和A. Pasquarello；法国微电子学与纳米技术研究所的C. Delerue和G. Allan进行了富有成果的讨论。

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