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Measurements of the Einstein relation in doped and undoped molecular thin films

机译:掺杂和未掺杂分子薄膜中爱因斯坦关系的测量

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摘要

We present the Kelvin probe force microscopy measurements of the Einstein relation, i.e., the relation between the diffusion coefficient of charge carriers and their mobility, in undoped and doped disordered organic thin films. The theoretical prediction of a large deviation of the Einstein relation from its classical value is verified and attributed to the energy distribution of the density of states. The results are explained in the context of degeneracy effects on the transport in disordered organic thin films, and their implications for organic-based devices are discussed.
机译:我们提出了在未掺杂和掺杂的无序有机薄膜中,爱因斯坦关系(即电荷载流子的扩散系数与其迁移率之间的关系)的开尔文探针力显微镜测量结果。爱因斯坦关系与其经典值有较大偏差的理论预测得到了验证,并归因于状态密度的能量分布。在退化对无序有机薄膜中的传输的影响的背景下解释了该结果,并讨论了其对基于有机物的器件的影响。

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