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首页> 外文期刊>Physical review >Hopping Conduction In Strongly Insulating States Of A Diffusive Bent Quantum Hall Junction
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Hopping Conduction In Strongly Insulating States Of A Diffusive Bent Quantum Hall Junction

机译：扩散弯曲的量子霍尔结的强绝缘状态下的跳跃传导。

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摘要

Transport studies of a bent quantum Hall junction at integer filling factor v show strongly insulating states (v=1 ,2) at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V_(dc) in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction G～exp[-(T_0/T)~(1/2)] at lower T. The base temperature electric-field dependence shows I(ε)～exp[-(-ε_0/ε)~(1/2)], consistent with one-dimensional (1D) variable-range hopping conduction. We observe almost identical behavior at v= 1 and v=2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hopping, which either include or ignore interactions are compared all of which are consistent with the basic model of disorder coupled counterpropagating quantum Hall edges.
机译：在整数填充因子v处的弯曲量子霍尔结的输运研究显示，在较高的电场下，存在强绝缘状态（v = 1,2）。在本文中，我们分析了强绝缘行为与温度T和直流偏置V_（dc）的函数关系，以便对造成绝缘状态的定位机制进行分类。温度依赖性表明从较高T的激活的最近邻居跳变到较低T的可变范围跳变传导G〜exp [-（T_0 / T）〜（1/2）]的交叉。基本温度电场依赖性显示I（ε）〜exp [-（-ε_0/ε）〜（1/2）]，与一维（1D）可变范围跳跃传导一致。我们在v = 1和v = 2时观察到几乎相同的行为，并讨论了弯曲量子霍尔结电导如何看起来与体自旋状态无关。比较了包括或忽略相互作用的一维可变范围跳跃的各种模型，所有这些模型与无序耦合的反向传播量子霍尔边缘的基本模型一致。

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