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Nanoscale Spin Polarization In The Dilute Magnetic Semiconductor (in,mn)sb

机译:稀磁半导体中的纳米尺度自旋极化(in,mn)sb

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摘要

Results of point-contact Andreev-reflection experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature T_c of 5.4 K allowed the determination of spin polarization when the ferromagnetic phase-transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase-transition temperature.
机译:提出并分析了在(In,Mn)Sb上的点接触安德列夫反射实验的结果,并根据电流在超导体-铁磁体界面的电流转换模型进行了分析。我们研究了表面透明性的影响,并研究了随着接触尺寸的变化,从弹道到扩散运输体系的过渡。在居里温度T_c为5.4 K的(In,Mn)Sb样品上施加Nb尖端,可以确定铁磁性相变温度超过温度时的自旋极化。我们发现局部自旋极化的温度依赖性与宏观磁化强度之间存在显着差异,并证明,甚至在磁相变温度以上,也存在磁化强度接近饱和值的纳米尺度簇。

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