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Stable Elasticity Of Epitaxial Cu Thin Films On Si

机译:Si上外延Cu薄膜的稳定弹性

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摘要

In epitaxial films, large elastic strain originating from the lattice misfit with the substrate remains, and it could affect the elastic stiffness. However, we found that epitaxially grown Cu thin films on (001) Si show exceptionally stable stiffness: the average out-of-plane elastic constant throughout the film thickness was independent of the film thickness and of the annealing procedure up to 150 ℃. We calculated the strain dependence of the elastic constants using the higher-order elastic constants and confirmed that the misfit strain with the substrate hardly affects the stiffness in the particular case of Cu(001) thin films.
机译:在外延膜中,由于晶格与基板不匹配而产生的大弹性应变仍然存在,并且可能影响弹性刚度。然而,我们发现在(001)Si上外延生长的Cu薄膜表现出格外稳定的刚度:整个膜厚的平均平面外弹性常数与膜厚以及最高150℃的退火工艺无关。我们使用高阶弹性常数计算了弹性常数的应变相关性,并确认了在特殊情况下Cu(001)薄膜中与基板的失配应变几乎不影响刚度。

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