Exciton and hole spin dynamics in ZnO investigated by time-resolved photoluminescence experiments

D. Lagarde; A. Balocchi; P. Renucci; H. Carrere; F. Zhao; T. Amand; X. Marie; Z. X. Mei; X. L. Du; Q. K. Xue

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Exciton and hole spin dynamics in ZnO investigated by time-resolved photoluminescence experiments

机译：时间分辨光致发光实验研究ZnO中的激子和空穴自旋动力学

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The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and nonintentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find τ_h~s ～ 350 ps at T=1.7 K in the ZnO epilayer. The strong energy and temperature dependences of the photo-luminescence polarization dynamics are well explained by the fast free exciton spin relaxation time and the ionization of bound excitons.

机译：通过时间分辨光学取向实验研究了ZnO中的载流子自旋动力学。我们证明在ZnO外延层和非故意掺杂的块状ZnO中，供体结合的激子发光均呈清晰的圆极化。这使我们能够测量局部空穴自旋弛豫时间。我们在ZnO外延层的T = 1.7 K处发现τ_h〜s〜350 ps。快速的自由激子自旋弛豫时间和结合的激子的电离可以很好地解释光致发光偏振动力学对能量和温度的依赖性。

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《Physical review》 |2008年第3期|56-59|共4页
作者
D. Lagarde; A. Balocchi; P. Renucci; H. Carrere; F. Zhao; T. Amand; X. Marie; Z. X. Mei; X. L. Du; Q. K. Xue;
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正文语种 eng
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optical creation of spin polarized carriers; Ⅱ-Ⅵ semiconductors;

机译：自旋极化载体的光学产生;Ⅱ-Ⅵ半导体;

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Exciton and hole spin dynamics in ZnO investigated by time-resolved photoluminescence experiments

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