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首页> 外文期刊>Physical review >Enhanced annealing, high Curie temperature, and low-voltage gating in (Ga,Mn)As: A surface oxide control study
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Enhanced annealing, high Curie temperature, and low-voltage gating in (Ga,Mn)As: A surface oxide control study

机译：（Ga，Mn）As中增强的退火，居里温度高和低压选通：表面氧化物控制研究

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摘要

Our x-ray photoemission, magnetization, and transport studies on surface-etched and annealed (Ga,Mn)As epilayers elucidate the key role of the surface oxide in controlling the outdiffusion of self-compensating interstitial Mn impurities. We achieved a dramatic reduction in annealing times necessary to optimize the epilayers after growth and synthesized (Ga,Mn)As films with the Curie temperature reaching 180 K. A p-n junction transistor is introduced, allowing for a large hole depletion in (Ga,Mn)As thin films at a few volts. The surface oxide etching procedure is applied to controllably reduce the thickness of the (Ga,Mn)As layer in the transistor and we observe a further strong enhancement of the field-effect on the channel resistance. The utility of our all-semiconductor ferromagnetic field-effect transistor in spintronic research is demonstrated on the measured large field effect on the anisotropic magnetoresistance.
机译：我们对表面腐蚀和退火的（Ga，Mn）As外延层进行的X射线光发射，磁化和输运研究阐明了表面氧化物在控制自补偿间隙Mn杂质的扩散中的关键作用。我们极大地减少了优化生长后的外延层所需的退火时间，并合成了居里温度达到180 K的（Ga，Mn）As薄膜。引入了pn结晶体管，允许（Ga，Mn作为几伏特的薄膜。应用表面氧化物蚀刻工艺可控地减小晶体管中（Ga，Mn）As层的厚度，我们观察到场效应对沟道电阻的进一步增强。通过测量大磁场对各向异性磁阻的影响，证明了我们的全半导体铁磁场效应晶体管在自旋电子学研究中的实用性。

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