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首页> 外文期刊>Physical review >Half-metallic interface and coherent tunneling in Co_2YZ/MgO/Co_2YZ (YZ=MnSi,CrAl) magnetic tunnel junctions: A first-principles study
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Half-metallic interface and coherent tunneling in Co_2YZ/MgO/Co_2YZ (YZ=MnSi,CrAl) magnetic tunnel junctions: A first-principles study

机译：Co_2YZ / MgO / Co_2YZ（YZ = MnSi，CrAl）磁性隧道结中的半金属界面和相干隧穿：第一性原理研究

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摘要

We present first-principles based calculations of electronic structures and tunneling conductance of Co_2YZ/MgO(～2 nm)/Co_2rZ(001) (YZ=MnSi,CrAl) magnetic tunnel junctions (MTJs). It is found that YZ(MnSi and CrAI)-terminated interfaces are thermodynamically stable as compared with Co-terminated interfaces in Co_2YZ/MgO(001) junctions. In the CrAl-termination, no interface states appear in both sides of the junctions, preserving the half metallicity of Co_2CrAl, while reduction of the spin polarization is significant in the MnSi termination. Co_2CrAl, however, has no Δ_1, band at the Fermi level, thus the majority-spin conductance of Co_2CrAl/MgO/Co_2CrAl(001) MTJs in the parallel magnetization is much smaller than that of Co_2MnSi/MgO/Co_2MnSi(001) MTJs. We propose that MTJs having an ultrathin Co2CrAl layer between Co_2MnSi electrode and MgO barrier, i.e., Co_2MnSi/Co_2CrAl/MgO(001) junctions, can derive both the half-metallic character at the interface and the large tunneling conductance through the Δ_1 channel in the parallel magnetization.
机译：我们提出了基于第一性原理的电子结构和Co_2YZ / MgO（〜2 nm）/ Co_2rZ（001）（YZ = MnSi，CrAl）磁性隧道结（MTJs）的隧穿电导的计算。发现与在Co_2YZ / MgO（001）结中的Co端接的界面相比，YZ（MnSi和CrAl）端接的界面在热力学上是稳定的。在CrAl端接中，结的两侧均未出现界面态，从而保留了Co_2CrAl的半金属性，而在MnSi端接中自旋极化的降低非常明显。但是，Co_2CrAl在费米能级没有Δ_1带，因此，平行磁化过程中Co_2CrAl / MgO / Co_2CrAl（001）MTJs的自旋电导率远小于Co_2MnSi / MgO / Co_2MnSi（001）MTJs的自旋电导。我们建议在Co_2MnSi电极和MgO势垒之间具有超薄Co2CrAl层的MTJ（即Co_2MnSi / Co_2CrAl / MgO（001）结）既可以在界面处获得半金属特性，又可以通过Δ_1通道获得较大的隧穿电导。平行磁化。

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