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首页> 外文期刊>Physical review >Atomic-scale structure of Ga_(1-x)In_xP alloys measured with extended x-ray absorption fine structure spectroscopy
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Atomic-scale structure of Ga_(1-x)In_xP alloys measured with extended x-ray absorption fine structure spectroscopy

机译：Ga_（1-x）In_xP合金的原子尺度结构用扩展X射线吸收精细结构光谱法测量

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Extended x-ray absorption fine structure spectroscopy was used to measure the interatomic distance distributions of the first three nearest-neighbor (NN) shells around Ga and In atoms in Ga_(1-x)In_xP. The first NN shell has a composition-dependent bimodal distance distribution with a relaxation parameter of ε=0.80±0.04 similar to other Ⅲ-Ⅴ ternary alloys. The second NN shell distance distribution remains multimodal, corresponding to the three different cation-cation pairs but is closer to the virtual-crystal approximation (VCA). The third NN shell mean distance is well approximated by the VCA although the distribution is significantly broadened. Predictive model calculations are discussed in detail where good agreement with experimental results is found. Like in Ga_(1-x)In_xAs, lattice mismatch is accommodated in Ga_(1-x)In_xP by both bond-length and bond-angle relaxations although primarily via the latter.
机译：扩展的X射线吸收精细结构光谱用于测量Ga_（1-x）In_xP中Ga和In原子周围的前三个最近邻（NN）壳的原子间距离分布。与其他Ⅲ-Ⅴ三元合金类似，第一个NN壳具有与成分有关的双峰距离分布，其弛豫参数为ε= 0.80±0.04。第二NN壳距离分布保持多峰，对应于三个不同的阳离子-阳离子对，但是更接近虚拟晶体近似（VCA）。尽管分布显着扩大，但第三次NN壳平均距离可以由VCA很好地近似。在发现与实验结果吻合良好的地方，将详细讨论预测模型的计算。像在Ga_（1-x）In_xAs中一样，尽管键长和键角弛豫都通过Ga_（1-x）In_xP来解决，但晶格失配可以通过键长和键角弛豫来解决。

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