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首页> 外文期刊>Physical review >Defect-related Photoluminescence Of Hexagonal Boron Nitride
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Defect-related Photoluminescence Of Hexagonal Boron Nitride

机译：六方氮化硼的缺陷相关光致发光

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摘要

Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time- and energy-resolved spectroscopy methods. The observed bands are related to donor-acceptor pair transitions, impurities, and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped conduction band electrons and valence band holes. These trapped charges are metastable and their re-excitation with low-energy photons results in anti-Slokes photoluminescence. The comparison of photoluminescence excitation spectra and PSL excitation spectra allows band analysis that supports the hypothesis of Frenkel-type exciton in hBN with a large binding energy.
机译：多晶六方氮化硼（hBN）的光致发光通过时间和能量分辨光谱法进行测量。观察到的谱带与施主-受主对过渡，杂质和结构缺陷有关。高于5.4 eV的高能光子对样品的激发导致了光激发发光（PSL）现象，这是由于远距离捕获了导带电子和价带空穴。这些被俘获的电荷是亚稳态的，它们用低能光子重新激发会导致抗Slokes光致发光。通过比较光致发光激发光谱和PSL激发光谱，可以进行能带分析，从而支持hBN中具有大结合能的Frenkel型激子的假设。

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