Intrinsic Ferromagnetism Due To Cation Vacancies In Gd-doped Gan: First-principles Calculations

Y. Gohda; Atsushi Oshiyama

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Intrinsic Ferromagnetism Due To Cation Vacancies In Gd-doped Gan: First-principles Calculations

机译：掺G的Gan中阳离子空位引起的内在铁磁性：第一性原理计算

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We report total-energy electronic-structure calculations based on density-functional theory that clarify magnetism of Gd-doped GaN. We find that Ga vacancies with the magnetic moment of 3μ_B formed upon Gd doping interact ferromagnetically with each other and thus cause gigantic magnetic moments per Gd atom. Our detailed analyses are indicative of intrinsic ferromagnetism due to cation vacancies rather than magnetic dopants in nitride semiconductors.

机译：我们报告基于密度泛函理论的总能电子结构计算，该理论阐明了掺Gd的GaN的磁性。我们发现，掺杂Gd时形成的磁矩为3μB的Ga空位彼此铁磁相互作用，从而导致每个Gd原子产生巨大的磁矩。我们的详细分析表明，由于阳离子空位而不是氮化物半导体中的磁性掺杂剂，其固有的铁磁性。

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《Physical review》 |2008年第16期|13-16|共4页
作者
Y. Gohda; Atsushi Oshiyama;
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正文语种 eng
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Ⅲ-Ⅴ semiconductors; magnetic semiconductors;

机译：Ⅲ-Ⅴ族半导体;磁性半导体;

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Intrinsic Ferromagnetism Due To Cation Vacancies In Gd-doped Gan: First-principles Calculations

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