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首页> 外文期刊>Physical review >Analysis Of Electric-field-induced Spin Splitting In Wide Modulation-doped Quantum Wells
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Analysis Of Electric-field-induced Spin Splitting In Wide Modulation-doped Quantum Wells

机译：宽调制掺杂量子阱中电场引起的自旋分裂的分析

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We analyze the proper inclusion of electric-field-induced spin splittings in the framework of the envelope function approximation. We argue that the Rashba effect should be included in the form of a macroscopic potential as diagonal terms in a multiband approach rather than the commonly used Rashba term dependent on k and electric field. It is pointed out that the expectation value of the electric field in a subband is sometimes not unique because the expectation values can even have opposite signs for the spin-split subband components. Symmetric quantum wells with Dresselhaus terms and the influence of the interfaces on the spin splitting are also discussed. We apply a well established multiband approach to wide modulation-doped InGaSb quantum wells with strong built-in electric fields in the interface regions. We demonstrate an efficient mechanism for switching on and off the Rashba splitting with an electric field being an order of magnitude smaller than the local built-in field that determines the Rashba splitting. The implications of our findings for spintronic devices, in particular the Datta-Das spin transistor and proposed modifications of it, are discussed.
机译：我们在包络函数逼近的框架内分析了电场引起的自旋分裂的适当纳入。我们认为，在多频带方法中，应该以宏观势能的形式将Rashba效应作为对角项而不是依赖于k和电场的常用Rashba项。要指出的是，子带中电场的期望值有时不是唯一的，因为期望值甚至对于自旋分裂子带分量甚至可以具有相反的符号。还讨论了具有Dresselhaus项的对称量子阱以及界面对自旋分裂的影响。我们将成熟的多频带方法应用于在界面区域具有强内置电场的宽调制掺杂InGaSb量子阱。我们演示了一种用于打开和关闭Rashba拆分的有效机制，其中电场比确定Rashba拆分的本地内置场小一个数量级。讨论了我们的发现对自旋电子器件（特别是Datta-Das自旋晶体管）及其建议修改的影响。

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