Spin Polarization Control Through Resonant States In An Fe/gaas Schottky Barrier

S. Honda; H. Itoh; J. Inoue; H. Kurebayashi; T. Trypiniotis; C. H. W. Barnes; A. Hirohata; J. A. C. Bland

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Spin Polarization Control Through Resonant States In An Fe/gaas Schottky Barrier

机译：Fe / gaas肖特基势垒中通过共振态的自旋极化控制

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Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photoexcited electrons and suggest that the spin polarization (from -100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage.

机译：已经研究了具有肖特基势垒的Fe / GaAs结的隧道电导率的自旋极化。结果表明，肖特基势垒内共振界面态的能带匹配定义了通过势垒传输的电子的自旋极化的迹象。该结果很好地说明了包括光激发电子的隧穿在内的实验结果，并表明自旋极化（从-100％到100％）取决于肖特基势垒高度。他们还建议可以通过偏置电压来控制自旋极化的符号。

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《Physical review》 |2008年第24期|512-517|共6页
作者
S. Honda; H. Itoh; J. Inoue; H. Kurebayashi; T. Trypiniotis; C. H. W. Barnes; A. Hirohata; J. A. C. Bland;
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正文语种 eng
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electron states at surfaces and interfaces; spin transport through interfaces; magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields;

机译：表面和界面处的电子态;通过界面的自旋输运;磁电子学;自旋电子学：利用自旋极化传输或集成磁场的设备;

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1. Ferromagnetic Effect of a Mn Delta Layer in the GaAs Barrier on the Spin Polarization of Carriers in an InGaAs/GaAs Quantum Well [J] . S. V. Zaitsev, M. V. Dorokhin, A. S. Brichkin, JETP Letters . 2009,第10期

机译：GaAs势垒中Mnδ层对InGaAs / GaAs量子阱中载流子自旋极化的铁磁效应
2. POLARIZATION DEPENDENCE OF PHOTOCURRENT SPECTRA OF SCHOTTKY-BARRIER PHOTODIODES BASED ON QUANTUM-WELL InGaAs/GaAs HETERO STRUCTURES [J] . D.O. Filatov, I.A. Karpovich, T.V. Shilova, Bulletin of the Russian Academy of Sciences. Physics . 2004,第1期

机译：基于量子阱InGaAs / GaAs异质结构的肖特基-布拉德族光电二极管的光子谱极化
3. POLARIZATION DEPENDENCE OF PHOTOSENSITIVITY OF THE SCHOTTKY BARRIER DIODES BASED ON THE InGaAs/GaAs QUANTUM WELL STRUCTURES [J] . D. O. FILATOV, I. A. KARPOVICH, T. V. SHILOVA, International journal of nanoscience . 2003,第6期

机译：基于InGaAs / GaAs量子阱结构的肖特基势垒二极管光敏性的极化相关性
4. Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes with Pd/GaAs Schottky collector [C] . Fukumitsu M., Asaoka N., Suhara M., Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on . 2004

机译：具有Pd / GaAs肖特基集电极的GaInP / GaAs三势垒共振隧穿二极管的制备与表征
5. Monte Carlo simulation of spin-polarized transport in a semiconductor heterostructure and spin injection through a Schottky barrier. [D] . Shen, Min. 2004

机译：蒙特卡罗模拟半导体异质结构中的自旋极化传输和通过肖特基势垒的自旋注入。
6. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors [O] . Ling-Feng Mao, Huansheng Ning, Zong-Liang Huo, -1

机译：顶部栅极石墨烯场效应晶体管中金属石墨烯触点的栅极控制肖特基势垒降低的物理模型
7. Spin polarization control through resonant states in an Fe/GaAs Schottky barrier [O] . Honda, S., Itoh, H., Inoue, J., 2008

机译：通过Fe / Gaas肖特基中的共振态进行自旋极化控制屏障

Spin Polarization Control Through Resonant States In An Fe/gaas Schottky Barrier

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