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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Experimental study of charge transport mechanisms in a hybrid metal/organic/inorganic device
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Experimental study of charge transport mechanisms in a hybrid metal/organic/inorganic device

机译：金属/有机/无机杂化器件中电荷传输机制的实验研究

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An hybrid metal/organic/inorganic semiconductor heterostructure was built, under ultrahigh vacuum conditions (UHV) and characterized in situ. The aim was to investigate the influence of thin film layers of the organic material Dimethyl-3,4,9,10-perylenetetracarboxylic diimide (DiMe-PTCDI) on the electrical response of organic-modified Ag/GaAs Schottky diodes. The device was tested by combining photoemission spectros-copy (PES) with atomic force microscopy (AFM) and electrical measurements (current-voltage Ⅰ-Ⅴ, capacitance-voltage C-V, impedance and charge transient spectroscopies QTS). The energy level alignment through the heterostructure was deduced. This allows us to consider electrons acting as majority carriers injected over a barrier by thermionic emission as a primary event in the charge transport. For thin organic layers (below 8 nm thickness) most of the characterization techniques show an island-like growth leading to formation of voids. The coverage of the H~+GaAs substrate as a function of the nominal thickness of DiMe-PTCDI was assessed via C-V measurements assuming a voltage independent capacitance of the organic layer. The frequency response of the device was evaluated through C-V and impedance measurements in the range 1 kHz-1 MHz. The almost independent behavior of the capacitance in the measured frequency range confirmed the assumption of a near geometrical capacitor, which was used for modeling the impedance of the device. QTS measurements performed on the heterostructure showed the presence of two relaxations induced by deposition of the organic layer. The first one is attributed to a deep trap at the metal/organic interface, while the second one has very small activation energy (～20 meV) which is probably due to disorder at the organic film. With such information a fit of the Ⅰ-Ⅴ characteristics of DiMe-PTCDI organic modified diodes based on the analytical expressions of a trapped charge limited current regime (TCLC) was intended. (Some figures are available in color only in the on-line version.)
机译：在超高真空条件（UHV）下构建了杂化金属/有机/无机半导体异质结构，并进行了原位表征。目的是研究有机材料Dimethyl-3,4,9,10-per四羧酸二酰亚胺（DiMe-PTCDI）的薄膜层对有机改性的Ag / GaAs肖特基二极管的电响应的影响。通过将光发射光谱（PES）与原子力显微镜（AFM）和电学测量（电流-电压Ⅰ-Ⅴ，电容-电压C-V，阻抗和电荷瞬变光谱QTS）相结合，对该器件进行了测试。推导了通过异质结构的能级对准。这使我们可以将电子作为主要载流子，将其通过热电子发射注入到势垒上方，作为电荷传输中的主要事件。对于较薄的有机层（厚度小于8 nm），大多数表征技术都显示出岛状生长，导致形成空隙。假设有机层的电压与电容量无关，可通过C-V测量来评估H〜+ GaAs衬底的覆盖率与DiMe-PTCDI标称厚度的关系。通过C-V和1 kHz-1 MHz范围内的阻抗测量来评估设备的频率响应。在测得的频率范围内，电容的几乎独立行为证实了采用近似几何电容器的假设，该电容器用于建模设备的阻抗。在异质结构上进行的QTS测量表明存在由有机层沉积引起的两个弛豫。第一个是由于金属/有机物界面处的深陷阱，而第二个则具有非常小的活化能（〜20 meV），这很可能是由于有机膜的无序性所致。基于这样的信息，旨在基于捕获电荷限制电流机制（TCLC）的解析表达式来拟合DiMe-PTCDI有机改性二极管的Ⅰ-Ⅴ特性。 （某些数字仅在在线版本中可用彩色显示。）

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