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首页> 外文期刊>Physical review >Influence of strain on the magnetization and magnetoelectric effect in La_(0.7)A_(0.3)MnO_3/PMN-PT(001) (A = Sr, Ca)
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Influence of strain on the magnetization and magnetoelectric effect in La_(0.7)A_(0.3)MnO_3/PMN-PT(001) (A = Sr, Ca)

机译：La_（0.7）A_（0.3）MnO_3 / PMN-PT（001）中的应变对磁化和磁电效应的影响（A = Sr，Ca）

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摘要

We investigate the influence of a well-defined reversible biaxial strain ≤ 0.12% on the magnetization (M) of epitaxial ferromagnetic manganite films. M has been recorded depending on temperature, strain and magnetic field in 20-50 nm thick films. This is accomplished by reversibly compressing the isotropic in-plane lattice parameter of the rhombohedral piezoelectric 0.72PMN-0.28PT (001) substrates by application of an electric field E ≤ 12 kVcm~(-1). The magnitude of the total variable in-plane strain has been derived. Strain-induced shifts of the ferromagnetic Curie temperature (T_c) of up to 19 K were found in La_(0.7)Sr_(0.3)MnO_3 (LSMO) and La_(0.7)Sr_(0.3)MnO_3 films and are quantitatively analyzed for LSMO within a cubic model. The effective magnetoelectric coupling coefficient α=μ_0dM/dE ≤ 6 × 10~(-8) s m~(-1) at ambient temperature in the magnetic-film-ferroelectric-substrate system results from the strain-induced M change. It corresponds to an enhancement of μ_0△M ≤ 19 mT upon biaxial compression of 0.1%. The extraordinary large α originates from the combination of three crucial properties: (ⅰ) the strong strain dependence of M in the ferromagnetic manganites, (ⅱ) large piezo-strain of the PMN-PT substrates, and (ⅲ) effective elastic coupling at the film-substrate interface.
机译：我们研究了≤0.12％的明确定义的可逆双轴应变对外延铁磁锰矿薄膜磁化强度（M）的影响。根据温度，应变和磁场在20-50 nm厚膜中记录了M。这是通过施加电场≤12 kVcm〜（-1）可逆地压缩菱形压电0.72PMN-0.28PT（001）基板的各向同性面内晶格参数来实现的。得出了总的可变面内应变的大小。在La_（0.7）Sr_（0.3）MnO_3（LSMO）和La_（0.7）Sr_（0.3）MnO_3膜中发现了高达19 K的铁磁居里温度（T_c）的应变诱导位移，并对其进行了定量分析，得出LSMO在立方模型。应变引起的M变化是磁膜-铁电基底系统在环境温度下的有效磁电耦合系数α=μ_0dM/ dE≤6×10〜（-8）s m〜（-1）。它对应于在0.1％的双轴压缩时μ_0△M≤19 mT的增强。异常大的α来自以下三个关键特性的组合：（ⅰ）铁磁性锰矿中M的强应变依赖性；（ⅱ）PMN-PT基底的大压电应变；以及（ⅲ）磁珠处的有效弹性耦合。薄膜-基材界面。

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