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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Doping-driven Mott transition in the one-band Hubbard model
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Doping-driven Mott transition in the one-band Hubbard model

机译：单频带Hubbard模型中由掺杂驱动的Mott过渡

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摘要

A powerful diagrammatic impurity solver is shown to permit a systematic study of the doping-driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean-field theory. At small dopings and large interaction strengths, we are able to access low enough temperatures that a reliable extrapolation to temperature T = 0 may be performed, and ground state energies of insulating and metallic states may be compared. We find that the T = 0 doping-driven transition is of second order and is characterized by an interaction-strength dependent electronic compressibility, which vanishes at the critical interaction strength of the half filled model. Over wide parameter ranges, the compressibility is substantially reduced relative to the noninteracting system. The metal-insulator transition is characterized by the appearance of in-gap states, but these are relevant only for very low dopings of less than 3%.
机译：图中显示了功能强大的图解杂质求解器，可以在单站点动态平均场理论的框架内系统研究单带Hubbard模型中掺杂驱动的Mott跃迁。在较小的掺杂和较大的相互作用强度下，我们能够获得足够低的温度，从而可以对温度T = 0进行可靠的推断，并且可以比较绝缘态和金属态的基态能量。我们发现，T = 0的掺杂驱动跃迁是二阶的，其特征是依赖于相互作用强度的电子可压缩性，在半填充模型的临界相互作用强度下消失。在较宽的参数范围内，相对于非交互系统，可压缩性显着降低。金属-绝缘体过渡的特征在于出现了带隙态，但是这些仅与小于3％的非常低的掺杂有关。

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