STM observation and first-principles determination of Ge nanoscale structures on Si(111)

Z. H. Qin; D. X. Shi; H. F. Ma; H.-J. Gao; Aditi S. Rao; Sanwu Wang; Sokrates T. Pantelides

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STM observation and first-principles determination of Ge nanoscale structures on Si(111)

机译：Si（111）上Ge纳米结构的STM观察和第一性原理确定

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Scanning tunneling microscopy observations and first-principles quantum mechanical calculations were employed to investigate the nanoscale structures formed on Si(111) surfaces upon germanium deposition at a coverage of ～ 0.3 monolayer. At room temperature, Ge atoms form nanoclusters with sizes of 1.5-6 nanometers in width. After annealing, the nanoclusters become two-dimensional islands with typical size of ～10 nanometers in width. We propose that the annealing or high-T deposition results in a partial transformation of (7 X 7) reconstructed unit cells to unreconstructed Si(111) configurations on which the Ge adatoms reside at the T_4 sites and form a (3~(1/2) X 3~(1/2))R30° reconstruction.

机译：扫描隧道显微镜观察和第一性原理量子力学计算被用来研究锗沉积在Si（111）表面上形成的纳米级结构，覆盖率约为0.3单层。在室温下，Ge原子形成宽度为1.5-6纳米的纳米团簇。退火后，纳米簇变成二维岛，典型尺寸为约10纳米宽。我们认为，退火或高T沉积会导致（7 X 7）重建的晶胞部分转化为未重建的Si（111）构型，Ge原子位于T_4位置并形成（3〜（1 / 2）X 3〜（1/2））R30°重建

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来源
《Physical review. B, Condensed Matter And Materials Physics》 |2007年第8期|p.085313.1-085313.5|共5页
作者
Z. H. Qin; D. X. Shi; H. F. Ma; H.-J. Gao; Aditi S. Rao; Sanwu Wang; Sokrates T. Pantelides;
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Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

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正文语种 eng
中图分类固体物理学;
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chemisorption/physisorption: adsorbates on surfaces; scanning tunneling microscopy (including chemistry induced with STM); electron states at surfaces and interfaces; semiconductor surfaces;

机译：化学吸附/物理吸附：表面上的吸附物;扫描隧道显微镜（包括用STM诱导的化学）;表面和界面上的电子态;半导体表面;

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专利

1. Formation and evolution of a self-organized hierarchy of Ge nanostructures on Si(111)-(7X7): STM observations and first-principles calculations [J] . H. F. Ma, Z. H. Qin, M. C. Xu, Physical review. B, Condensed Matter And Materials Physics . 2007,第16期

机译：Si（111）-（7X7）上Ge纳米结构自组织层次的形成和演化：STM观察和第一性原理计算
2. Formation and evolution of a self-organized hierarchy of Ge nanostructures on Si(111)-(7 × 7):STM observations and first-principles calculations [J] . H. F. Ma, Z. H. Qin, M. C. Xu, Physical review . 2007,第16期

机译：Si（111）-（7×7）上Ge纳米结构自组织层次的形成和演化：STM观察和第一性原理计算
3. Structure determination of Pb/Ge(111) -β (√3× √3)R30°by dynamical low-energy electron diffraction analysis and first-principles calculation [J] . Ohtsubo Ya, Muto H., Yaji K., Journal of Physics. Condensed Matter . 2011,第43期

机译：动态低能电子衍射分析和第一性原理计算确定Pb / Ge（111）-β（√3×√3）R30°的结构
4. Atomic structure of the Ag/Ge(111)-( √3× √3) surface: from STM observation to theoretical study [C] . Chou L.-W., Wu H.C., Lee Y.-R., Nanoelectronics Conference (INEC), 2010 . 2010

机译：Ag / Ge（111）-（√3×√3）表面的原子结构：从STM观察到理论研究
5. Hot electron transport and surface morphology studies of MBE grown nanoscale platinum/calcium fluoride/silicon(111) structures. [D] . LaBella, Vincent Patrick. 1998

机译：MBE生长的纳米级铂/氟化钙/硅（111）结构的热电子传输和表面形态研究。
6. Structure Determination of Au on Pt(111) Surface: LEED STM and DFT Study [O] . Katarzyna Krupski, Marco Moors, Paweł Jóźwik, 2015

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7. In-situ observation and structure determination of the InSb(111)A and (111)B reconstructed surfaces by ultra high vacuum electron microscopy [O] . 中田俊隆 1993

机译：超高真空电子显微镜对InSb（111）A和（111）B重建表面的原位观察和结构确定
8. Underpotential deposition of Ag adlayers on Pt(111): Structures and determination of O(sub 2) adsorption on Pt(111) [R] . Marinkovic, N. S., Wang, J. X., Adzic, R. R. 1997

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STM observation and first-principles determination of Ge nanoscale structures on Si(111)

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