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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Observation of local electronic structures of adatom vacancies in Si(111)-(7 X 7) surface in real space
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Observation of local electronic structures of adatom vacancies in Si(111)-(7 X 7) surface in real space

机译:真实空间中Si(111)-(7 X 7)表面原子空位的局部电子结构观察

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The evolution of the local electronic structure of the Si(111)-(7 X 7) surface containing adatom vacancies is resolved by energy-dependent scanning tunneling microscopy. The dI/dV images show clear and rich features that are bias dependent and can be sorted into several patterns. The probed dI/dV patterns reflect the different hybridized electronic features arising from the adatom vacancies. A typical electronic state associated with the single adatom vacancy in the surface is experimentally found to be at about 0.55 eV below the Fermi energy level, which is essentially attributed to the two upward backbone atoms around the adatom vacancy. We also find that adatom vacancies can induce the images of some rest atoms to be invisible in the dI/dV maps.
机译:Si(111)-(7 X 7)包含吸附原子空位的局部电子结构的演化通过依赖能量的扫描隧道显微镜来解决。 dI / dV图像显示清晰,丰富的特征,这些特征与偏置有关,可以分为几种模式。探测的dI / dV模式反映了由于原子空位而产生的不同的杂交电子特征。实验上发现与表面单个原子空位有关的典型电子态比费米能级低约0.55 eV,这基本上归因于原子空位周围的两个向上的主链原子。我们还发现,吸附原子的空位可以诱导一些剩余原子的图像在dI / dV映射中不可见。

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