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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Real-space investigation of fast diffusion of hydrogen on Si(001) by a combination of nanosecond laser heating and STM
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Real-space investigation of fast diffusion of hydrogen on Si(001) by a combination of nanosecond laser heating and STM

机译：纳秒激光加热和STM相结合的氢在Si（001）上快速扩散的真实空间研究

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摘要

The rearrangement of silicon dangling bonds induced by pulsed laser heating of monohydride-covered Si(001) surfaces has been studied by means of scanning tunneling microscopy (STM). The initial configurations, which were created by laser-induced thermal desorption, consist of isolated pairs of dangling bonds at two adjacent dimers and represent an excited state of the surface. Hydrogen diffusion causes this arrangement to change during only a few nanosecond laser pulses into the equilibrium configuration with most of the dangling bonds being paired up at a single dimer. STM images taken after different numbers of heating pulses show snapshots of the surface configuration frozen at various stages of the fast equilibration process. In this way, hydrogen diffusion associated with rates as high as 10~8 s~(-1) could be monitored with atomic resolution. Comparison with Monte Carlo simulations of the diffusion processes allows for the precise determination of both the diffusion rates and the pairing energies between dangling bonds at high surface temperature.
机译：已通过扫描隧道显微镜（STM）研究了由脉冲激光加热覆盖一氢化物的Si（001）表面引起的硅悬空键的重排。由激光诱导的热脱附产生的初始构型由在两个相邻二聚体处的成对的悬空键对构成，代表表面的激发态。氢的扩散导致这种排列仅在几纳秒的激光脉冲期间就变为平衡构型，其中大多数的悬空键在一个二聚体处配对。在不同数量的加热脉冲后拍摄的STM图像显示了在快速平衡过程的各个阶段冻结的表面构造的快照。这样，就可以用原子分辨率监测与高达10〜8 s〜（-1）的速率相关的氢扩散。与扩散过程的蒙特卡洛模拟进行比较，可以精确确定扩散速率和高表面温度下悬空键之间的配对能量。

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