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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements
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Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements

机译：六方氮化硼的发光特性：阴极发光和光致发光光谱测量

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Cathodoluminescence and photoluminescence spectroscopies have been performed on hexagonal boron nitride powders. The combination of these techniques allows us to analyze the two observed luminescence bands. A deep-level UV emission at about 4 eV is attributed to defects or impurities, and a near-band-gap UV emission is observed at about 5.5 eV. The deep-level band is composed of four peaks, which are attributed to phonon replica due to localized vibrations. In the near-band-gap region, six components are observed between 5.2 and 5.96 eV, in agreement with the recent experiments performed on h-BN single crystals by Watanabe et al. [Nat. Mater. 3, 404 (2004)], but they are assigned here to Frenkel excitons.
机译：对六方氮化硼粉末进行了阴极发光和光致发光光谱分析。这些技术的结合使我们能够分析两个观察到的发光带。大约4 eV的深层UV发射归因于缺陷或杂质，在大约5.5 eV处观察到近带隙UV发射。深能级带由四个峰组成，这四个峰归因于局部振动的声子复制。在近带隙区域中，在5.2和5.96 eV之间观察到六个分量，这与Watanabe等人最近在h-BN单晶上进行的实验一致。 [Nat。母校3，404（2004）]，但此处将它们分配给Frenkel激子。

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