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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Spin-dependent photocurrent induced by Rashba-type spin splitting in Al_(0.25)Ga_(0.75)N/GaN heterostructures
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Spin-dependent photocurrent induced by Rashba-type spin splitting in Al_(0.25)Ga_(0.75)N/GaN heterostructures

机译：Al_（0.25）Ga_（0.75）N / GaN异质结构中Rashba型自旋分裂诱导的自旋相关光电流

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摘要

Circular and linear photogalvanic effects are experimentally demonstrated in (0001)-oriented Al_(0.25)Ga_(0.75)N/GaN heterostructures. By changing the incident angle of the pumping light beam, it is possible to manipulate the relative strength between the circular and linear photogalvanic effects. The spin-dependent signal is evidenced by the sign change upon reversing the radiation helicity. Its consistency with the strength of the Rashba-type spin splitting as determined from the beating of Shubnikov-de Haas oscillations reveals the underlying mechanism responsible for the observed effect. The measured spin-dependent photocurrent is larger than that of the intersubband transition by two orders of magnitude at room temperature. AlGaN/GaN heterostructures therefore provide an excellent opportunity for the generation of spin polarized current to be used in spintronics.
机译：在（0001）取向的Al_（0.25）Ga_（0.75）N / GaN异质结构中实验证明了圆形和线性光电流效应。通过改变泵浦光束的入射角，可以控制圆形和线性光电流效应之间的相对强度。通过反转辐射螺旋度时的符号变化可以证明自旋相关信号。由Shubnikov-de Haas振荡的跳动所确定的其与Rashba型自旋分裂强度的一致性揭示了引起观察到的效应的潜在机理。在室温下，测得的自旋相关光电流比子带间跃迁的光电流大两个数量级。因此，AlGaN / GaN异质结构为产生用于自旋电子学的自旋极化电流提供了极好的机会。

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