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首页> 外文期刊>Physical review >Crystalline electric field contribution to the magnetoresistance of Pr_(1_x)La_xOs_4Sb_(12)
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Crystalline electric field contribution to the magnetoresistance of Pr_(1_x)La_xOs_4Sb_(12)

机译：晶体电场对Pr_（1_x）La_xOs_4Sb_（12）的磁阻的贡献

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摘要

Resistivity measurements were performed on Pr_(1-x)La_xOs_4Sb_(12) single crystals at temperatures down to 20 mK and in fields up to 18 T. The results for dilute-Pr samples (x=0.3 and 0.67) are consistent with model calculations performed assuming a singlet crystalline-electric-field (CEF) ground state. The residual resistivity of these crystals features a smeared step centered around 9 T, the predicted crossing field for the lowest CEF levels. The CEF contribution to the magnetoresistance has a weaker-than-calculated dependence on the field direction, suggesting that interactions omitted from the CEF model lead to avoided crossing in the effective levels of the Pr~(3+) ion. The dome-shaped magnetoresistance observed for x=0 and 0.05 cannot be reproduced by the CEF model, and likely results from fluctuations in the field-induced antiferroquadrupolar phase.
机译：对Pr_（1-x）La_xOs_4Sb_（12）单晶进行了电阻率测量，温度低至20 mK，场强达18T。稀Pr样品（x = 0.3和0.67）的结果与模型计算一致在假设单线态晶体电场（CEF）基态的情况下进行。这些晶体的残余电阻率具有一个以9 T为中心的拖尾阶跃，这是最低CEF水平的预测交叉场。 CEF对磁阻的贡献对磁场方向的依赖性比计算的要弱，这表明从CEF模型中忽略的相互作用可避免Pr_（3+）离子的有效能级交叉。 CEF模型无法再现在x = 0和0.05时观察到的圆顶形磁阻，这很可能是由场感应的反四铁极相的波动引起的。

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