Vacancy generation in liquid phase epitaxy of Si

A. La Magna; V. Privitera; Guelielmo Fortunato; Massimo Cuscuna; B. G. Svensson; E. Monakhov; K. Kuitunen; J. Slotte; F. Tuomisto

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Vacancy generation in liquid phase epitaxy of Si

机译：Si液相外延中的空位生成

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Concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and regrowth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy supersaturation after the laser process depending on the irradiation conditions. Stochastic atomistic simulations of the molten Si recrystalli-zation show trapping of vacancies in the recrystallized region. Finally, continuum phase-field simulations of the full process, calibrated using the Monte Carlo results, show a defect evolution in close agreement with the experiments.

机译：应用一致的实验和理论分析来结论性地证明了激光辐照下Si的快速熔化和再生长过程中的空位产生。基于正电子an没光谱法并旨在测试理论预测的实验证明，根据辐照条件，激光加工后会出现空位过饱和。熔融硅重结晶的随机原子模拟表明，在重结晶区存在空位陷阱。最后，使用蒙特卡洛结果进行校准的整个过程的连续相场模拟显示出与实验密切相关的缺陷演变。

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来源
《Physical review》 |2007年第23期|235201.1-235201.6|共6页
作者
A. La Magna; V. Privitera; Guelielmo Fortunato; Massimo Cuscuna; B. G. Svensson; E. Monakhov; K. Kuitunen; J. Slotte; F. Tuomisto;
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CNR-IMM Sezione Catania, Stradale Primosole 50, I-95121 Catania, Italy;

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正文语种 eng
中图分类固体物理学;
关键词
interaction between different crystal defects; gettering effect; distribution theory and monte carlo studies; laser applications; phase transitions and critical phenomena;

机译：不同晶体缺陷之间的相互作用;吸气作用分配理论和蒙特卡洛研究;激光应用;相变和临界现象;

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机译：GAAS1-XPX合金中硅，硫和碲相关的DX中心的行为
2. Optical and crystallographic properties and impurity incorporation of GaxIn1-xAs (0.44≪x≪0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition [J] . Journal of Applied Physics . 1983,第8期

机译：通过液相外延，气相外延和金属有机化学气相沉积法生长的GaxIn1-xAs（0.44≪x≪0.49）的光学和晶体学性质以及杂质掺入
3. Liquid-phase epitaxy of GaSe and potential application for wide frequency-tunable coherent terahertz-wave generation [J] . Yutaka Oyama, Tadao Tanabe, Fumikazu Sato, Journal of Crystal Growth . 2008,第7a9期

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4. Second Harmonic Generation in Lithium Niobate Planar Waveguides Grown by Liquid Phase Epitaxy [C] . Yi Lu, Benjamin Johnston, Peter Dekker, Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference . 2009

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5. Part I. Isocratic and gradient elution reversed-phase liquid chromatography for the estimation of the hydrophobicity parameter log k(',w): Applications to newer generation stationary phases. Part II. Planar electrochromatographic instrumental design and results. [D] . Tate, Peter Anthony. 2005

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6. In-situ Liquid Phase Epitaxy: Another Strategy to Synthesize Heterostructured Core-shell Composites [O] . Zhongsheng Wen, Guanqin Wang -1

机译：原位液相外延：合成异质结构核壳复合材料的另一种策略。
7. Vacancy generation in liquid phase epitaxy of Si [O] . La Magna A., Privitera V., Fortunato Guglielmo, 2007

机译：Si液相外延中的空位生成
8. Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy [R] . 1994

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Vacancy generation in liquid phase epitaxy of Si

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