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Photocurrent spectroscopy of deep levels in ZnO thin films

机译：ZnO薄膜深层的光电流光谱

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Epitaxial ZnO(0001) thin films have been grown by pulsed-laser deposition on α-Al_2O_3 and investigated by deep level transient spectroscopy (DLTS) and by Fourier transform infrared photocurrent (FTIR-PC) spectroscopy in the midinfrared wavelength range. FTIR-PC spectra of undoped ZnO layers show several well-resolved spectral features between 100 and 500 meV due to transitions from deep defect states either to the conduction band or to the valence band. They include the commonly observed intrinsic deep defects El at ～ 110 meV and E3 at ～320 meV. DLTS and FTIR-PC measurements were repeated after annealing the samples either in vacuum, under oxygen, or nitrogen atmospheres. Based on annealing effects, the possible microscopic origin of major deep levels in the ZnO samples is discussed. Further FTIR-PC investigations of Co- and Mn-doped ZnO reveal defect levels at ～270, ～380, and ～450 meV and are compared with corresponding DLTS data.
机译：通过在α-Al_2O_3上进行脉冲激光沉积来生长外延ZnO（0001）薄膜，并通过深层瞬态光谱（DLTS）和傅里叶变换红外光电流（FTIR-PC）光谱在中红外波长范围内进行了研究。由于从深缺陷状态到导带或价带的跃迁，未掺杂的ZnO层的FTIR-PC光谱显示了100到500 meV之间的几个分辨良好的光谱特征。它们包括在〜110 meV处通常观察到的内在深缺陷El和在〜320 meV处的E3。在真空，氧气或氮气气氛下对样品进行退火后，重复进行DLTS和FTIR-PC测量。基于退火效应，讨论了ZnO样品中主要深能级的微观起源。进一步的FTIR-PC研究表明，Co和Mn掺杂的ZnO的缺陷水平分别为270、380和450 meV，并与相应的DLTS数据进行了比较。

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