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首页> 外文期刊>Physical review >Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: Demonstration in current-induced switching
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Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: Demonstration in current-induced switching

机译：（Ga，Mn）As微型器件中磁晶各向异性的局部控制：电流感应开关的演示

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摘要

The large saturation magnetization in conventional dense moment ferromagnets offers a flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields, but. these dipolar fields, in turn, limit the integrability of magnetic elements in information storage devices. We show that in a (Ga,Mn)As dilute-moment ferromagnet, with comparatively weaker magnetic dipole interactions, locally tunable magnetocrystalline anisotropy can take the role of the internal field which determines the magnetic configuration. Experiments and theoretical modeling are presented for lithographically patterned microchannels, and the phenomenon is attributed to lattice relaxations across the channels. The utility of locally controlled magnetic anisotropies is demonstrated in current-induced switching experiments. We report structure sensitive, current-induced in-plane magnetization switchings well below the Curie temperature at critical current densities ～ 10~5 A cm~(-2). The observed phenomenology shows signatures of a contribution from domain-wall spin-transfer-torque effects.
机译：常规致密矩铁磁体中的大饱和磁化强度提供了一种通过消磁形状各向异性场来操纵有序状态的灵活方法。这些偶极场又限制了信息存储设备中磁性元件的可集成性。我们表明，在（Ga，Mn）As稀释矩铁磁体中，磁偶极子相互作用相对较弱，局部可调谐的磁晶各向异性可以起决定磁场磁性的内部磁场的作用。提出了用于光刻图案化微通道的实验和理论模型，该现象归因于整个通道的晶格弛豫。在电流感应开关实验中证明了局部控制磁各向异性的效用。我们报告了在临界电流密度〜10〜5 A cm〜（-2）时，结构敏感的电流感应面内磁化开关远低于居里温度。观察到的现象学显示了畴壁自旋转移扭矩效应的贡献。

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