Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection

M. Dubois; D. Jimenez; P. L. de Andres; S. Roche

首页> 外文期刊>Physical review >Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection

【24h】

Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection

机译：具有二硅化物源极/漏极触点的肖特基势垒MOSFET的多尺度建模：触点在载流子注入中的作用

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on a multiscale approach for the simulation of electrical characteristics of metal disilicide based Schottky-barrier metal oxide semiconductor field-effect transistors (SB-MOSFETs). Atomistic tight-binding method and nonequilibrium Green's function formalism are combined to calculate the propagation of charge carriers in the metal and the charge distribution at the MSi_2(111)/Si(111) and MSi_2(111)/Si(100) (with M =Ni, Co, and Fe) contacts. Quantum transmission coefficients at the interfaces are then computed accounting for energy and momentum conservation, and are further used as input parameters for a compact model of SB-MOSFET current-voltage simulations. In the quest for nanodevice performance optimization, this approach allows unveiling the role of different materials in configurations relevant for heterostructure nanowires.

机译：我们报告了一种用于模拟基于金属二硅化物的肖特基势垒金属氧化物半导体场效应晶体管（SB-MOSFETs）的电特性的多尺度方法。结合原子紧密结合方法和非平衡格林函数形式来计算金属中载流子的传播以及MSi_2（111）/ Si（111）和MSi_2（111）/ Si（100）的电荷分布= Ni，Co和Fe）触点。然后计算界面处的量子传输系数，以考虑能量和动量守恒，并将其进一步用作SB-MOSFET电流-电压仿真的紧凑模型的输入参数。在寻求纳米器件性能优化的过程中，此方法允许揭示与异质结构纳米线相关的配置中不同材料的作用。

著录项

来源
《Physical review》 |2007年第11期|115337.1-115337.10|共10页
作者
M. Dubois; D. Jimenez; P. L. de Andres; S. Roche;
展开▼
作者单位

CEA-DRFMC/SPSMS/GT, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
electronic transport in interface structures; nanoelectronic devices; nanoelectronic devices; surface double layers; schottky barriers; and work functions;

机译：接口结构中的电子传输;纳米电子器件;纳米电子器件;表面双层;肖特基势垒和工作职能;

相似文献

外文文献
中文文献
专利

1. The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors [J] . Lee R. T. P., Koh A. T.-Y., Tan K.-M., Electron Devices, IEEE Transactions on . 2009,第11期

机译：碳和Dy在降低Ni [Dy] Si：C接触以降低肖特基势垒高度方面的作用及其在具有Si：C源/漏应力源的N沟道MOSFET中的应用
2. Simultaneous Measurements of Drain-to-Source Current and Carrier Injection Properties of Top-Contact Pentacene Thin-Film Transistors [J] . Yutaka Majima, Daisuke Kawakami, Seiichi Suzuki, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第1期

机译：顶接触并五苯薄膜晶体管的漏源电流和载流子注入特性的同时测量
3. Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors [J] . Thanh Thuy Trinh, Jang Kyungsoo, Velumani S., Materials science in semiconductor processing . 2015,第Null期

机译：肖特基势垒高度在源/漏接触处对高载流子浓度非晶InGaZnO薄膜晶体管的电学改善的作用
4. Optimization of Recessed and Elevated Silicide Source/Drain Contact Structure Using Physical Compact Resistance Modeling and Simulation in Ultra-Thin Body SOI MOSFETs [C] . Seong-Dong Kim, Jeffrey B. Johnson, Jun Yuan, International Conference on Simulation of Semiconductor Processes and Devices(SISPAD 2004); 20040902-04; Munich(DE) . 2004

机译：使用物理紧凑型电阻建模和仿真的超薄体SOI MOSFET优化嵌入式和高级硅化物源/漏接触结构
5. Creating highly efficient carrier injection or collection contacts via soft-contact lamination of p-doped interlayers. [D] . Dai, An. 2015

机译：通过p掺杂中间层的软接触层压来创建高效的载流子注入或收集接触。
6. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
7. Comparison of Raised and Schottky Source/Drain MOSFETs Using a Novel Tunneling Contact Model [O] . Meikei Ieong, Paul M. Solomon, S. E. Laux, 1998

机译：用新型隧道接触模型比较凸起和肖特基源极/漏极mOsFET

Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection

摘要

著录项

相似文献

相关主题

期刊订阅