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Inelastic carrier lifetime in graphene

机译:石墨烯的非弹性载流子寿命

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摘要

We consider hot-carrier inelastic scattering due to electron-electron interactions in graphene as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped graphene utilizing the G_0W and random phases approximations. Using the full dynamically screened Coulomb interaction, we obtain the inelastic quasiparticle lifetimes and associated mean free paths. The linear dispersion of graphene gives lifetime energy dependences that are qualitatively different from those of parabolic-band semiconductors. We also get good agreement with data from angle-resolved photoemission spectroscopy experiments.
机译:我们认为由于石墨烯中的电子-电子相互作用引起的热载流子非弹性散射是载流子能量和密度的函数。我们利用G_0W和随机相位近似来计算掺杂石墨烯的零温度准粒子自能的虚部。使用完全动态筛选的库仑相互作用,我们获得了非弹性准粒子寿命和相关的平均自由程。石墨烯的线性色散给出的寿命能量依赖性在性质上与抛物线形带半导体不同。我们也与角度分辨光发射光谱实验的数据很好地吻合。

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