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首页> 外文期刊>Physical review >Defect chemical modeling of mesoscopic ion conduction in nanosized CaF_2/BaF_2 multilayer heterostructures
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Defect chemical modeling of mesoscopic ion conduction in nanosized CaF_2/BaF_2 multilayer heterostructures

机译:纳米CaF_2 / BaF_2多层异质结构中介观离子传导的缺陷化学建模。

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摘要

Interfacial and mesoscopic size effects in molecular beam epitaxy-grown CaF_2/BaF_2 heterolayers have been quantitatively analyzed on the basis of Gouy-Chapman and Mott-Schottky space-charge profiles. The linear dependence of the overall parallel conductivity on the inverse interfacial spacing found for large interfacial spacings (e > 50 nm) can be obtained from both models being in good agreement with the experimental data. An upward bending occurring for small interfacial spacings (e < 30 nm) can only be reproduced by the Mott-Schottky model based on the assumption of frozen-in impurity profiles.
机译:基于Gouy-Chapman和Mott-Schottky空间电荷分布图,定量分析了分子束外延生长的CaF_2 / BaF_2异质层中的界面和介观尺寸效应。可以从两个与实验数据高度吻合的模型中获得总平行电导率对大界面间距(e> 50 nm)反界面间距的线性依赖性。对于小界面间距(e <30 nm)发生的向上弯曲只能由Mott-Schottky模型基于冻结杂质分布的假设来再现。

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