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Experimental investigation of electronic properties of buried heterointerfaces of LaAlO_3 on SrTiO_3

机译：LarO_3在SrTiO_3上的掩埋异质界面电子性质的实验研究

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We have made very thin films of LaAlO_3 on TiO_2 terminated SrTiO_3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 10~(16) cm~(-1) and a mobility around 10~4 cm~2 V~(-1) s~(-1). In situ ultraviolet photoelectron spectroscopy (UPS) indicates that for these samples a finite density of states exists at the Fermi level. From the oxygen pressure dependence measured in both transport as well as the UPS, we detail, as reported previously by us, that oxygen vacancies play an important role in the creation of the charge carriers and that these vacancies are introduced by the pulsed laser deposition process used to make the heterointerfaces. Under the conditions studied the effect of LaAlO_3 on the carrier density is found to be minimal.
机译：我们已经在TiO_2封端的SrTiO_3上制作了非常薄的LaAlO_3薄膜，并以各种方式测量了所得界面的性能。输运测量结果表明，最大片状载体密度为10〜（16）cm〜（-1），迁移率约为10〜4 cm〜2 V〜（-1）s〜（-1）。原位紫外光电子能谱（UPS）表明，对于这些样品，费米能级存在有限的状态密度。从运输和UPS中测量到的氧气压力依赖性来看，正如我们先前报道的那样，我们详细介绍了氧空位在电荷载流子的产生中起着重要作用，并且这些空位是通过脉冲激光沉积过程引入的用于制作异构接口。在所研究的条件下，发现LaAlO_3对载流子密度的影响最小。

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